Method of manufacture of a semiconductor on insulator structure

ABSTRACT

A method is provided for preparing a semiconductor-on-insulator structure comprising a multilayer dielectric layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to U.S. Provisional Patent ApplicationNo. 62/532,417 filed on Jul. 14, 2017, the entire disclosure of which ishereby incorporated by reference in its entirety.

FIELD OF THE INVENTION

The present invention generally relates to the field of semiconductorwafer manufacture. More specifically, the present invention relates to amethod of a manufacturing a semiconductor-on-insulator (e.g.,silicon-on-insulator) structure.

BACKGROUND OF THE INVENTION

Semiconductor wafers are generally prepared from a single crystal ingot(e.g., a silicon ingot) which is trimmed and ground to have one or moreflats or notches for proper orientation of the wafer in subsequentprocedures. The ingot is then sliced into individual wafers. Whilereference will be made herein to semiconductor wafers constructed fromsilicon, other materials may be used to prepare semiconductor wafers,such as germanium, silicon carbide, silicon germanium, gallium arsenide,and other alloys of Group III and Group V elements, such as galliumnitride or indium phosphide, or alloys of Group II and Group VIelements, such as cadmium sulfide or zinc oxide.

Semiconductor wafers (e.g., silicon wafers) may be utilized in thepreparation of composite layer structures. A composite layer structure(e.g., a semiconductor-on-insulator, and more specifically, asilicon-on-insulator (SOI) structure) generally comprises a handle waferor layer, a device layer, and an insulating (i.e., dielectric) film(typically an oxide layer) between the handle layer and the devicelayer. Generally, the device layer is between 0.01 and 20 micrometersthick, such as between 0.05 and 20 micrometers thick. Thick film devicelayers may have a device layer thickness between about 1.5 micrometersand about 20 micrometers. Thin film device layers may have a thicknessbetween about 0.01 micrometer and about 0.20 micrometer. In general,composite layer structures, such as silicon-on-insulator (SOI),silicon-on-sapphire (SOS), and silicon-on-quartz, are produced byplacing two wafers in intimate contact, thereby initiating bonding byvan der Waal's forces, followed by a thermal treatment to strengthen thebond. The anneal may convert the terminal silanol groups to siloxanebonds between the two interfaces, thereby strengthening the bond.

After thermal anneal, the bonded structure undergoes further processingto remove a substantial portion of the donor wafer to achieve layertransfer. For example, wafer thinning techniques, e.g., etching orgrinding, may be used, often referred to as back etch SOI (i.e., BESOI),wherein a silicon wafer is bound to the handle wafer and then slowlyetched away until only a thin layer of silicon on the handle waferremains. See, e.g., U.S. Pat. No. 5,189,500, the disclosure of which isincorporated herein by reference as if set forth in its entirety. Thismethod is time-consuming and costly, wastes one of the substrates andgenerally does not have suitable thickness uniformity for layers thinnerthan a few microns.

Another common method of achieving layer transfer utilizes a hydrogenimplant followed by thermally induced layer splitting. Particles (atomsor ionized atoms, e.g., hydrogen atoms or a combination of hydrogen andhelium atoms) are implanted at a specified depth beneath the frontsurface of the donor wafer. The implanted particles form a cleave planein the donor wafer at the specified depth at which they were implanted.The surface of the donor wafer is cleaned to remove organic compounds orother contaminants, such as boron compounds, deposited on the waferduring the implantation process.

The front surface of the donor wafer is then bonded to a handle wafer toform a bonded wafer through a hydrophilic bonding process. Prior tobonding, the donor wafer and/or handle wafer are activated by exposingthe surfaces of the wafers to plasma containing, for example, oxygen ornitrogen. Exposure to the plasma modifies the structure of the surfacesin a process often referred to as surface activation, which activationprocess renders the surfaces of one or both of the donor water andhandle wafer hydrophilic. The surfaces of the wafers can be additionallychemically activated by a wet treatment, such as an SC1 clean orhydrofluoric acid. The wet treatment and the plasma activation may occurin either order, or the wafers may be subjected to only one treatment.The wafers are then pressed together, and a bond is formed therebetween. This bond is relatively weak, due to van der Waal's forces, andmust be strengthened before further processing can occur.

In some processes, the hydrophilic bond between the donor wafer andhandle wafer (i.e., a bonded wafer) is strengthened by heating orannealing the bonded wafer pair. In some processes, wafer bonding mayoccur at low temperatures, such as between approximately 300° C. and500° C. In some processes, wafer bonding may occur at high temperatures,such as between approximately 800° C. and 1100° C. The elevatedtemperatures cause the formation of covalent bonds between the adjoiningsurfaces of the donor wafer and the handle wafer, thus solidifying thebond between the donor wafer and the handle wafer. Concurrently with theheating or annealing of the bonded wafer, the particles earlierimplanted in the donor wafer weaken the cleave plane.

A portion of the donor wafer is then separated (i.e., cleaved) along thecleave plane from the bonded wafer to form the SOI wafer. Cleaving maybe carried out by placing the bonded wafer in a fixture in whichmechanical force is applied perpendicular to the opposing sides of thebonded wafer in order to pull a portion of the donor wafer apart fromthe bonded wafer. According to some methods, suction cups are utilizedto apply the mechanical force. The separation of the portion of thedonor wafer is initiated by applying a mechanical wedge at the edge ofthe bonded wafer at the cleave plane in order to initiate propagation ofa crack along the cleave plane. The mechanical force applied by thesuction cups then pulls the portion of the donor wafer from the bondedwafer, thus forming an SOI wafer.

According to other methods, the bonded pair may instead be subjected toan elevated temperature over a period of time to separate the portion ofthe donor wafer from the bonded wafer. Exposure to the elevatedtemperature causes initiation and propagation of cracks along the cleaveplane, thus separating a portion of the donor wafer. The crack forms dueto the formation of voids from the implanted ions, which grow by Ostwaldripening. The voids are filled with hydrogen and helium. The voidsbecome platelets. The pressurized gases in the platelets propagatemicro-cavities and micro-cracks, which weaken the silicon on the implantplane. If the anneal is stopped at the proper time, the weakened bondedwafer may be cleaved by a mechanical process. However, if the thermaltreatment is continued for a longer duration and/or at a highertemperature, the micro-crack propagation reaches the level where allcracks merge along the cleave plane, thus separating a portion of thedonor wafer. This method allows for better uniformity of the transferredlayer and allows recycle of the donor wafer, but typically requiresheating the implanted and bonded pair to temperatures approaching 500°C.

SUMMARY OF THE INVENTION

The present invention is directed to a method of preparing a multilayerstructure, the method comprising: (a) forming a front handle silicondioxide layer on a front handle surface of a single crystal siliconhandle wafer and a back handle silicon dioxide layer on a back handlesurface of a single crystal silicon handle wafer, wherein the singlecrystal silicon handle wafer comprises two major, generally parallelsurfaces, one of which is the front handle surface of the single crystalsilicon handle wafer and the other of which is the back handle surfaceof the single crystal silicon handle wafer, a circumferential edgejoining the front handle surface and the back handle surface of thesingle crystal silicon handle wafer, a central plane between the fronthandle surface and the back handle surface of the single crystal siliconhandle wafer, and a bulk region between the front and back handlesurfaces of the single crystal silicon handle wafer; (b) forming a fronthandle silicon nitride layer on the front handle silicon dioxide layerand a back handle silicon nitride layer on the back handle silicondioxide layer; (c) bonding the front handle silicon nitride layer to adonor silicon dioxide layer on a front donor surface of a single crystalsilicon donor wafer to thereby form a bonded structure, wherein thesingle crystal silicon donor wafer comprises two major, generallyparallel surfaces, one of which is the front donor surface of the singlecrystal silicon donor wafer and the other of which is the back donorsurface of the single crystal silicon donor wafer, a circumferentialedge joining the front donor surface and the back donor surface of thesingle crystal silicon donor wafer, a central plane between the frontdonor surface and the back donor surface of the single crystal silicondonor wafer, and a bulk region between the front and back donor surfacesof the single crystal silicon donor wafer, and further wherein thesingle crystal silicon donor wafer comprises a damage layer formed byion implantation; (d) removing the back handle silicon nitride layer;and (e) removing the back handle silicon dioxide layer.

The present invention is further directed to a method of preparing amultilayer structure, the method comprising: (a) forming a front handlesilicon dioxide layer on a front handle surface of a single crystalsilicon handle wafer, wherein the single crystal silicon handle wafercomprises two major, generally parallel surfaces, one of which is thefront handle surface of the single crystal silicon handle wafer and theother of which is the back handle surface of the single crystal siliconhandle wafer, a circumferential edge joining the front handle surfaceand the back handle surface of the single crystal silicon handle wafer,a central plane between the front handle surface and the back handlesurface of the single crystal silicon handle wafer, and a bulk regionbetween the front and back handle surfaces of the single crystal siliconhandle wafer; (b) forming a front handle silicon nitride layer on thefront handle silicon dioxide layer; (c) annealing the single crystalsilicon handle wafer comprising the front handle silicon dioxide layerand the front handle silicon nitride layer at a temperature and durationsufficient to densify the front handle silicon dioxide layer, the fronthandle silicon nitride layer, or both; and (d) bonding the front handlesilicon nitride layer to a donor silicon dioxide layer on a front donorsurface of a single crystal silicon donor wafer to thereby form a bondedstructure, wherein the single crystal silicon donor wafer comprises twomajor, generally parallel surfaces, one of which is the front donorsurface of the single crystal silicon donor wafer and the other of whichis the back donor surface of the single crystal silicon donor wafer, acircumferential edge joining the front donor surface and the back donorsurface of the single crystal silicon donor wafer, a central planebetween the front donor surface and the back donor surface of the singlecrystal silicon donor wafer, and a bulk region between the front andback donor surfaces of the single crystal silicon donor wafer, andfurther wherein the single crystal silicon donor wafer comprises adamage layer formed by ion implantation.

The present invention is still further directed to a method of preparinga multilayer structure, the method comprising: (a) forming a front donorsilicon dioxide layer on a front donor surface of a single crystalsilicon donor wafer, wherein the single crystal silicon donor wafercomprises two major, generally parallel surfaces, one of which is thefront donor surface of the single crystal silicon donor wafer and theother of which is the back donor surface of the single crystal silicondonor wafer, a circumferential edge joining the front donor surface andthe back donor surface of the single crystal silicon donor wafer, acentral plane between the front donor surface and the back donor surfaceof the single crystal silicon donor wafer, and a bulk region between thefront and back donor surfaces of the single crystal silicon donor wafer;(b) forming a front donor silicon nitride layer on the front donorsilicon dioxide layer; (c) implanting ions through the front donorsilicon nitride layer and the front donor silicon dioxide layer and intothe bulk region of the single crystal silicon donor wafer to therebyform a damage layer; and (d) bonding the front donor silicon nitridelayer to a handle silicon dioxide layer on a front handle surface of asingle crystal silicon handle wafer, wherein the single crystal siliconhandle wafer comprises two major, generally parallel surfaces, one ofwhich is the front handle surface of the single crystal silicon handlewafer and the other of which is the back handle surface of the singlecrystal silicon handle wafer, a circumferential edge joining the fronthandle surface and the back handle surface of the single crystal siliconhandle wafer, a central plane between the front handle surface and theback handle surface of the single crystal silicon handle wafer, and abulk region between the front and back handle surfaces of the singlecrystal silicon handle wafer.

Other objects and features will be in part apparent and in part pointedout hereinafter.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A through 1C depict a process flow according to some embodimentsof the present invention.

FIG. 2 depicts a multilayer structure according to some embodiments ofthe present invention.

FIG. 3 depicts a multilayer structure according to some embodiments ofthe present invention.

FIG. 4 depicts a process flow according to some embodiments of thepresent invention.

FIGS. 5A and 5B depict light point defect density maps for two wafersprepared according to the method described in Example 2.

FIGS. 6A and 6B are TEM cross-section images of the bond interfacebetween the handle nitride and the donor oxide for two wafers preparedaccording to the method described in Example 2.

FIGS. 7A and 7B depict light point defect density maps for two wafersprepared according to the method described in Example 3.

FIGS. 8A and 8B are TEM cross-section images of the bond interfacebetween the handle nitride and the donor oxide for two wafers preparedaccording to the method described in Example 3.

FIGS. 9A and 9B depict light point defect density maps for two wafersprepared according to the method described in Example 3.

The figures illustrate non-limiting embodiments of the invention.

DETAILED DESCRIPTION OF THE EMBODIMENT(S) OF THE INVENTION

The present invention is directed to a method of manufacture of amulti-layered semiconductor-on-insulator structure (SOI, e.g., asilicon-on-insulator structure). The dielectric layer in thesemiconductor-on-insulator structure may comprise one or more insulatinglayers located between the handle wafer and the donor wafer or devicelayer. The one or more insulating layers in the SOI structure accordingto the present invention may include silicon nitride, silicon dioxide,silicon oxynitride, and combinations of these materials. Preferably, thedielectric layer comprises a multilayer comprising at least twoinsulating layers comprising these materials, or at least threeinsulating layers, or more insulating layers. According to someembodiments of the present invention, the insulating layer may comprisesan oxide-nitride-oxide (ONO) dielectric layer in which a first oxidelayer is in interfacial contact with the handle wafer and a second oxidelayer is in interfacial contact with the donor wafer or device layer.The nitride layer is between the two oxide layers.

SOI wafers comprising an ONO dielectric may be manufactured to havelayers (e.g., oxide and/or nitride layers) on the backside of the handlewafer. The methods disclosed herein yield wafers at end-of-the-linewhich have no backside layers. According to some embodiments of themethod of the present invention, the SOI structure may be manufacturedto have a handle wafer with backside layers, which are later removed.According to embodiments of the method of the present invention, the SOIstructure may be manufactured in a manner in which the handle wafer hasno dielectric layers deposited on the backside. In such embodiments,backside layer removal is not necessary.

SOI wafers comprising an ONO dielectric are useful in the manufacture ofradiofrequency devices. The nitride layer between the two oxide layersfunctions as an etch stop layer. After device fabrication on the topsilicon layer, the fabricated device wafer is temporarily bonded to asupport substrate and the handle wafer is removed. The nitride layerserves as the etch stop for the handle removal process. Then, the devicelayer is bonded to another substrate which enables device operation atlower harmonic distortion. Ideally, the backside of the handle wafer isfree of nitride and oxide layers, which eases the handle removalprocess. Also, in the fabrication of the devices in the top siliconlayer, there may be wafer processing operations where the wafer backsideemissivity can alter the process control (e.g., temperaturemeasurement). Over the course of manufacturing ONO SOI wafers, if thehandle wafers comprise an oxide backside layer and/or nitride backsidelayer, or even a single oxide backside layer, process variation couldlead to variability in layer thickness(es) which may alter emissivityand lead to lot-to-lot process variability; or even within-wafer localvariation. Thus, it is desirable to have a manufacturing process wherebackside layers are either not produced or are eliminated in themanufacturing process.

I. Semiconductor Handle Wafer and Semiconductor Donor Wafer

The wafers for use in the present invention include a semiconductorhandle wafer, e.g., a single crystal semiconductor handle wafer, and asemiconductor donor wafer, e.g., a single crystal semiconductor donorwafer. The semiconductor device layer in a semiconductor-on-insulatorcomposite structure is derived from the single crystal semiconductordonor wafer. The semiconductor device layer may be transferred onto thesemiconductor handle wafer by wafer thinning techniques such as etchinga semiconductor donor wafer or by cleaving a semiconductor donor wafercomprising a damage plane. According to the method of the presentinvention, one or more insulating layers may be prepared on the surfacesof either or both the single crystal semiconductor handle wafer and thesingle crystal semiconductor donor wafer.

With reference to FIG. 1A, an exemplary, non-limiting single crystalsemiconductor handle wafer 100 is depicted. A single crystalsemiconductor donor wafer may have substantially the same initialstructure. In general, the single crystal semiconductor handle wafer 100comprises two major, generally parallel surfaces. One of the parallelsurfaces is a front surface 102 of the single crystal semiconductorhandle wafer 100, and the other parallel surface is a back surface 104of the single crystal semiconductor handle wafer 100. The single crystalsemiconductor handle wafer 100 comprises a circumferential edge 106joining the front and back surfaces 102, 104. The single crystalsemiconductor handle wafer 100 comprise a central axis 108 perpendicularto the two major, generally parallel surfaces 102, 104 and alsoperpendicular to a central plane defined by the points midway betweenthe front and back surfaces 102, 104. The single crystal semiconductorhandle wafer 100 comprises a bulk region 110 between the two major,generally parallel surfaces 102, 104. Since semiconductor wafers, e.g.,silicon wafers, typically have some total thickness variation (TTV),warp, and bow, the midpoint between every point on the front surface 102and every point on the back surface 104 may not precisely fall within aplane. As a practical matter, however, the TTV, warp, and bow aretypically so slight that to a close approximation the midpoints can besaid to fall within an imaginary central plane which is approximatelyequidistant between the front and back surfaces 102, 104.

Prior to any operation as described herein, the front surface 102 andthe back surface 104 of the single crystal semiconductor handle wafer100 may be substantially identical. A surface is referred to as a “frontsurface” or a “back surface” merely for convenience and generally todistinguish the surface upon which the operations of method of thepresent invention are performed. In the context of the presentinvention, a “front surface” of a single crystal semiconductor handlewafer 100, e.g., a single crystal silicon handle wafer, refers to themajor surface of the wafer that becomes an interior surface of thebonded structure. Accordingly, a “back surface” of a single crystalsemiconductor handle wafer 100, e.g., a handle wafer, refers to themajor surface that becomes an exterior surface of the bonded structure.Similarly, a “front surface” of a single crystal semiconductor donorwafer, e.g., a single crystal silicon donor wafer, refers to the majorsurface of the single crystal semiconductor donor wafer that becomes aninterior surface of the bonded structure, and a “back surface” of asingle crystal semiconductor donor wafer, e.g., a single crystal silicondonor wafer, refers to the major surface that becomes an exteriorsurface of the bonded structure. In the context of the presentinvention, one or more insulating layers may be prepared on the frontsurfaces of either or both the single crystal semiconductor handle wafer100 and the single crystal semiconductor donor wafer. Certain depositiontechniques deposit insulating layers on the front surface and the backsurface of the handle wafer and/or donor wafer. Such techniques envelopethe wafer with the insulating layer material. Upon completion ofconventional bonding and wafer thinning steps, the single crystalsemiconductor donor wafer forms the semiconductor device layer of thesemiconductor-on-insulator (e.g., silicon-on-insulator) compositestructure.

The single crystal semiconductor handle wafer and the single crystalsemiconductor donor wafer may be single crystal semiconductor wafers. Inpreferred embodiments, the semiconductor wafers comprise a materialselected from the group consisting of silicon, silicon carbide, silicongermanium, gallium arsenide, gallium nitride, indium phosphide, indiumgallium arsenide, germanium, and combinations thereof. The singlecrystal semiconductor wafers, e.g., the single crystal silicon handlewafer and single crystal silicon donor wafer, of the present inventiontypically have a nominal diameter of at least about 150 mm, at leastabout 200 mm, at least about 300 mm, or at least about 450 mm. Waferthicknesses may vary from between about 100 micrometers and about 5000micrometers, such as between about 100 micrometers and about 1500micrometers, such as between about 250 micrometers to about 1500micrometers, such as between about 300 micrometers and about 1000micrometers, suitably within the range of about 500 micrometers to about1000 micrometers. In some specific embodiments, the wafer thickness maybe about 725 micrometers. In some embodiments, the wafer thickness maybe about 775 micrometers.

In particularly preferred embodiments, the single crystal semiconductorwafers comprise single crystal silicon wafers which have been slicedfrom a single crystal ingot grown in accordance with conventionalCzochralski crystal growing methods or float zone growing methods. Suchmethods, as well as standard silicon slicing, lapping, etching, andpolishing techniques are disclosed, for example, in F. Shimura,Semiconductor Silicon Crystal Technology, Academic Press, 1989, andSilicon Chemical Etching, (J. Grabmaier ed.) Springer-Verlag, N.Y., 1982(incorporated herein by reference). Preferably, the wafers are polishedand cleaned by standard methods known to those skilled in the art. See,for example, W. C. O'Mara et al., Handbook of Semiconductor SiliconTechnology, Noyes Publications. If desired, the wafers can be cleaned,for example, in a standard SC1 (5 parts water:1 part aqueous ammoniumhydroxide (29% by weight):1 part aqueous hydrogen peroxide (30% byweight))/SC2 solution (6 parts water:1 part aqueous hydrochloric acid(37% by weight):1 part aqueous hydrogen peroxide (30% by weight)). Insome embodiments, the single crystal silicon wafers of the presentinvention are single crystal silicon wafers which have been sliced froma single crystal ingot grown in accordance with conventional Czochralski(“Cz”) crystal growing methods, typically having a nominal diameter ofat least about 150 mm, at least about 200 mm, at least about 300 mm, orat least about 450 mm. Preferably, both the single crystal siliconhandle wafer and the single crystal silicon donor wafer havemirror-polished front surface finishes that are free from surfacedefects, such as scratches, large particles, etc. Wafer thickness mayvary from about 250 micrometers to about 1500 micrometers, such asbetween about 300 micrometers and about 1000 micrometers, suitablywithin the range of about 500 micrometers to about 1000 micrometers. Insome specific embodiments, the wafer thickness may be between about 725micrometers and about 800 micrometers, such as between about 750micrometers and about 800 micrometers. In some embodiments, the waferthickness may be about 725 micrometers. In some embodiments, the waferthickness may be about 775 micrometers.

In some embodiments, the single crystal semiconductor wafers, i.e.,single crystal semiconductor handle wafer and single crystalsemiconductor donor wafer, comprise interstitial oxygen inconcentrations that are generally achieved by the Czochralski-growthmethod. In some embodiments, the single crystal semiconductor waferscomprise oxygen in a concentration between about 4 PPMA and about 18PPMA. In some embodiments, the semiconductor wafers comprise oxygen in aconcentration between about 10 PPMA and about 35 PPMA. In someembodiments, the single crystal silicon wafer comprises oxygen in aconcentration of no greater than about 10 PPMA. Interstitial oxygen maybe measured according to SEMI MF 1188-1105.

The single crystal semiconductor handle wafer 100 may have anyresistivity obtainable by the Czochralski or float zone methods.Accordingly, the resistivity of the single crystal semiconductor handlewafer 100 is based on the requirements of the end use/application of thestructure of the present invention. The resistivity may therefore varyfrom milliohm or less to megaohm or more. In some embodiments, thesingle crystal semiconductor handle wafer 100 comprises a p-type or ann-type dopant. Suitable dopants include boron (p type), gallium (ptype), aluminum (p type), indium (p type), phosphorus (n type), antimony(n type), and arsenic (n type). The dopant concentration is selectedbased on the desired resistivity of the handle wafer. In someembodiments, the single crystal semiconductor handle wafer comprises ap-type dopant. In some embodiments, the single crystal semiconductorhandle wafer is a single crystal silicon wafer comprising a p-typedopant, such as boron.

In some embodiments, the single crystal semiconductor handle wafer 100has a relatively low minimum bulk resistivity, such as below about 100ohm-cm, below about 50 ohm-cm, below about 1 ohm-cm, below about 0.1ohm-cm, or even below about 0.01 ohm-cm. In some embodiments, the singlecrystal semiconductor handle wafer 100 has a relatively low minimum bulkresistivity, such as below about 100 ohm-cm, or between about 1 ohm-cmand about 100 ohm-cm. Low resistivity wafers may comprise electricallyactive dopants, such as boron (p type), gallium (p type), aluminum (ptype), indium (p type), phosphorus (n type), antimony (n type), andarsenic (n type).

In some embodiments, the single crystal semiconductor handle wafer 100has a relatively high minimum bulk resistivity. High resistivity wafersare generally sliced from single crystal ingots grown by the Czochralskimethod or float zone method. High resistivity wafers may compriseelectrically active dopants, such as boron (p type), gallium (p type),aluminum (p type), indium (p type), phosphorus (n type), antimony (ntype), and arsenic (n type), in generally very low concentrations.Cz-grown silicon wafers may be subjected to a thermal anneal at atemperature ranging from about 600° C. to about 1000° C. in order toannihilate thermal donors caused by oxygen that are incorporated duringcrystal growth. In some embodiments, the single crystal semiconductorhandle wafer has a minimum bulk resistivity of at least 100 Ohm-cm, oreven at least about 500 Ohm-cm, such as between about 100 Ohm-cm andabout 100,000 Ohm-cm, or between about 500 Ohm-cm and about 100,000Ohm-cm, or between about 1000 Ohm-cm and about 100,000 Ohm-cm, orbetween about 500 Ohm-cm and about 10,000 Ohm-cm, or between about 750Ohm-cm and about 10,000 Ohm-cm, between about 1000 Ohm-cm and about10,000 Ohm-cm, between about 1000 Ohm-cm and about 6000 ohm-cm, betweenabout 2000 Ohm-cm and about 10,000 Ohm-cm, between about 3000 Ohm-cm andabout 10,000 Ohm-cm, or between about 3000 Ohm-cm and about 5,000Ohm-cm. In some preferred embodiments, the single crystal semiconductorhandle wafer has a bulk resistivity between about 1000 Ohm-cm and about6,000 Ohm-cm. Methods for preparing high resistivity wafers are known inthe art, and such high resistivity wafers may be obtained fromcommercial suppliers, such as SunEdison Semiconductor Ltd. (St. Peters,Mo.; formerly MEMC Electronic Materials, Inc.).

The single crystal semiconductor handle wafer 100 may comprise singlecrystal silicon. The single crystal semiconductor handle wafer 100 mayhave, for example, any of (100), (110), or (111) crystal orientation,and the choice of crystal orientation may be dictated by the end use ofthe structure.

II. Dielectric Layer Comprising One or More Insulating Layers

With reference to FIG. 2, a non-limiting, exemplary multi-layeredsemiconductor-on-insulator structure (SOI, e.g., a silicon-on-insulatorstructure) is depicted. According to the method of the presentinvention, a dielectric layer 420 comprising one or more insulatinglayers (e.g., three or more insulating layers, therein numbers 200, 300,and 400) is prepared between a single crystal semiconductor handle wafer100 and a single crystal semiconductor donor wafer 500. According toFIG. 2, the SOI structure comprises a dielectric layer 420 comprisingthree insulating layers, e.g., an oxide-nitride-oxide dielectric layer(ONO), according to some embodiments of the present invention. In someembodiments, the multi-layered semiconductor-on-insulator structurecomprises a single crystal semiconductor handle wafer 100, a firstsemiconductor oxide layer 200, a semiconductor nitride layer 300, asecond semiconductor oxide layer 400, and a single crystal semiconductordonor wafer 500. Other configurations of insulating layers fall withinthe scope of the present disclosure. For example, one or more insulatinglayers may be excluded from the dielectric layer, or additionalinsulating layers may be included. With reference to FIG. 2, the bondinginterface can be any of the following: (1) between the single crystalsemiconductor handle wafer 100 and the first semiconductor oxide layer200, (2) between the first semiconductor oxide layer 200 and thesemiconductor nitride layer 300, (3) between the semiconductor nitridelayer 300 and the semiconductor second oxide layer 400, (4) between thefirst semiconductor oxide layer 200 and the second semiconductor oxidelayer 400 if the structure lacks a nitride layer, and (5) between thesecond semiconductor oxide layer 400 and the single crystalsemiconductor donor wafer 500.

The dielectric layer 420 may comprise the ONO layers as depicted in FIG.2, or may comprise other structures comprising one or more layers ofinsulating material. The dielectric layer 420 may be formed upon thefront surface of the single crystal semiconductor handle wafer 100 or itmay be formed upon the front surface of the single crystal semiconductordonor wafer 500. In still further embodiments, portions of thedielectric layer 420 may be contributed by insulating layers formed uponboth the front surface of the single crystal semiconductor handle wafer100 and the front surface of the single crystal semiconductor donorwafer 500.

The dielectric layer according to the present invention may compriseinsulating materials selected from among silicon dioxide, siliconnitride, silicon oxynitride, and any combination thereof. In someembodiments, the dielectric layer comprises one or more insulatingmaterial selected from the group consisting of silicon dioxide, siliconnitride, silicon oxynitride, and any combination thereof. In someembodiments, the dielectric layer has a thickness of at least about 10nanometer thick, such as between about 10 nanometers and about 10,000nanometers, between about 10 nanometers and about 5,000 nanometers,between 50 nanometers and about 500 nanometers, or between about 100nanometers and about 400 nanometers, such as about 50 nanometers, about75 nanometers, about 85 nanometers, about 100 nanometers, about 150nanometers, about 175 nanometers, or about 200 nanometers.

In some embodiments, the dielectric layer 420 comprises multiple layersof insulating material, for example, as depicted in FIG. 2, althoughother configurations are within the scope of this invention. Thedielectric layer may comprise two insulating layers, three insulatinglayers, or more. In some embodiments, each insulating layer may comprisea material selected from the group consisting of silicon dioxide,silicon nitride, silicon oxynitride, and any combination thereof. Eachinsulating layer may have a thickness of at least about 1 nanometerthick, or at least about 10 nanometer thick, such as between about 10nanometers and about 10,000 nanometers, between about 10 nanometers andabout 5,000 nanometers, between 50 nanometers and about 500 nanometers,or between about 100 nanometers and about 400 nanometers, such as about50 nanometers, about 75 nanometers, about 85 nanometers, about 100nanometers, about 150 nanometers, about 175 nanometers, or about 200nanometers.

In some embodiments, the dielectric layer comprises two insulatinglayers, wherein the two insulating layers comprise silicon dioxidelayer, silicon nitride, silicon oxynitride, or any combination thereof.In some embodiments, the dielectric layer comprises two insulatinglayers prepared upon the front surface of a single crystal semiconductordonor wafer. For example, the two layers comprise a silicon dioxidelayer in interfacial contact with the front surface of the singlecrystal semiconductor donor wafer (before the cleaving process) or thesingle crystal semiconductor device layer (after the cleaving process)and a silicon nitride layer in interfacial contact with the silicondioxide layer. In some embodiments, the dielectric layer comprises twoinsulating layers prepared upon the front surface of a single crystalsemiconductor handle wafer. In some embodiments, the dielectric layercomprises two insulating layers, one of which is prepared upon the frontsurface of a single crystal semiconductor handle wafer, and the other ofwhich is prepared upon the front surface of a single crystalsemiconductor donor wafer. Each insulating layer within a bilayerdielectric layer may have a thickness of at least about 1 nanometerthick, or at least about 10 nanometer thick, such as between about 10nanometers and about 10,000 nanometers, between about 10 nanometers andabout 5,000 nanometers, between 50 nanometers and about 500 nanometers,or between about 100 nanometers and about 400 nanometers, such as about50 nanometers, about 75 nanometers, about 85 nanometers, about 100nanometers, about 150 nanometers, about 175 nanometers, or about 200nanometers.

In some embodiments, and as depicted in FIG. 2, the dielectric layer 420comprises three insulating layers. In some embodiments, the threeinsulating layers comprise a silicon dioxide layer, a silicon nitridelayer in interfacial contact with the silicon dioxide layer, and asilicon dioxide layer in interfacial contact with the silicon nitridelayer. In some embodiments, the dielectric layer comprises threeinsulating layers prepared upon the front surface of a single crystalsemiconductor donor wafer. For example, the dielectric layer 420comprises three insulating layers, wherein the three insulating layerscomprise a silicon dioxide layer in interfacial contact with the frontsurface of the single crystal semiconductor donor wafer (before thecleaving process) or the single crystal semiconductor device layer(after the cleaving process), a silicon nitride layer in interfacialcontact with the silicon dioxide layer, and a silicon dioxide layer ininterfacial contact with the silicon nitride layer. In some embodiments,the dielectric layer comprises three insulating layers prepared upon thefront surface of a single crystal semiconductor handle wafer. In someembodiments, the dielectric layer comprises three insulating layers, oneor two of which are prepared upon the front surface of a single crystalsemiconductor handle wafer, and the other one or two of which areprepared upon the front surface of a single crystal semiconductor donorwafer. Each insulating layer within a trilayer dielectric layer may havea thickness of at least about 1 nanometer thick, or at least about 10nanometer thick, such as between about 10 nanometers and about 10,000nanometers, between about 10 nanometers and about 5,000 nanometers,between 50 nanometers and about 500 nanometers, or between about 100nanometers and about 400 nanometers, such as about 50 nanometers, about75 nanometers, about 85 nanometers, about 100 nanometers, about 150nanometers, about 175 nanometers, or about 200 nanometers.

III. Thermal Deposition of Insulating Layers

In some embodiments, one or more insulating layers may be prepared uponthe front surface of the single crystal semiconductor handle wafer 100and/or one or more insulating layers may be prepared upon the frontsurface of a single crystal semiconductor donor wafer by a thermaldeposition process. In general, a thermal oxidation method oxidizes boththe front surface 102 and the back surface 104 of a single crystalsemiconductor handle wafer 100 or single crystal semiconductor donorwafer, unless a masking technique is employed to inhibit oxidation of aside, or a portion of a side, of a wafer. In some embodiments, oxidationof both the front side and the back side of a wafer is advantageous tooffset compressive stresses that may otherwise result in wafer bow for awafer having an oxidation layer on only one side of the wafer. In someembodiments, a blanket nitridation method may be used to deposit siliconnitride over a thermally deposited silicon dioxide layer. Accordingly,in some embodiments, the single crystal semiconductor handle wafer 100comprises a silicon dioxide layer that envelopes the wafer and a siliconnitride layer in contact with the silicon dioxide layer that envelopesthe silicon dioxide layer. In later steps, according to the method ofthe present invention, one or more of the backside nitride and oxidelayers may be removed.

In some embodiments, the front and back surfaces of the wafers may bethermally oxidized in a furnace such as an ASM A400 or ASM A400XT.Thermal oxidation generally occurs at elevated temperatures, such asbetween about 800° C. and about 1200° C. Oxidation may be wet (e.g., ina water vapor, such as ultrahigh purity steam for oxidation, ambientatmosphere) or dry (e.g., in an oxygen gas atmosphere). Optionally, theambient atmosphere may contain hydrochloric acid, e.g., up to about 10volume %, to remove surface impurities during oxidation. The oxidationlayer, silicon dioxide SiO₂, on the front surface 102, the back surface104, or both of the single crystal semiconductor handle wafer 100 orsingle crystal semiconductor donor wafer may be at least about 1nanometer thick, or at least about 10 nanometers thick, such as betweenabout 10 nanometers and about 10,000 nanometers, between about 10nanometers and about 5,000 nanometers, between 50 nanometers and about500 nanometers, or between about 100 nanometers and about 400nanometers, such as about 50 nanometers, about 75 nanometers, about 85nanometers, about 100 nanometers, about 150 nanometers, about 175nanometers, or about 200 nanometers. In thermal oxidation methods inwhich both the front and back surfaces are oxidized, the silicon dioxidelayers are generally the same thicknesses front and back, althoughtechniques may be used, such as etching or polishing, to vary thethicknesses.

In some embodiments, the oxidation layer is relatively thin, such asbetween about 5 angstroms and about 25 angstroms, such as between about10 angstroms and about 15 angstroms. Thin oxide layers can be obtainedon both sides of a semiconductor wafer by exposure to a standardcleaning solution, such as an SC1/SC2 cleaning solution. In someembodiments, the SC1 solution comprises 5 parts deioinized water, 1 partaqueous NH₄OH (ammonium hydroxide, 29% by weight. of NH₃), and part ofaqueous H₂O₂ (hydrogen peroxide, 30%). In some embodiments, the handlewafer may be oxidized by exposure to an aqueous solution comprising anoxidizing agent, such as an SC2 solution. In some embodiments, the SC2solution comprises 5 parts deioinized water, 1 part aqueous HCl(hydrochloric acid, 39% by weight), and 1 part of aqueous H₂O₂ (hydrogenperoxide, 30%).

In some embodiments, a nitride layer may be deposited over the frontside, the back side, or both of a single crystal semiconductor handlewafer and/or single crystal semiconductor donor wafer. The nitride layeris generally deposited over an oxidation layer in the fabrication of ONOlayers. Although masking techniques are available to deposit nitridelayers on one side of a wafer, in some embodiments, nitridation of boththe front side and the back side of a wafer is advantageous to offsettensile stresses that may otherwise result in wafer bow for a waferhaving a nitride layer on only one side of the wafer. Thermalnitridation generally occurs at elevated temperatures, such above about1200° C. Suitable nitridation atmospheres include nitrogen and ammonia.The nitridation layer, silicon nitride Si₃N₄, on the front surface 102,the back surface 104, or both of the single crystal semiconductor handlewafer 100 or single crystal semiconductor donor wafer may be at leastabout 1 nanometer thick, or at least about 10 nanometers thick, such asbetween about 10 nanometers and about 10,000 nanometers, between about10 nanometers and about 5,000 nanometers, between 50 nanometers andabout 500 nanometers, or between about 100 nanometers and about 400nanometers, such as about 50 nanometers, about 75 nanometers, about 85nanometers, about 100 nanometers, about 150 nanometers, about 175nanometers, or about 200 nanometers. In thermal nitridation methods inwhich both the front and back surfaces are nitirded, the silicon nitridelayers are generally the same thicknesses front and back, althoughtechniques may be used, such as etching or polishing, to vary thethicknesses.

IV. Chemical Vapor Deposition of Insulating Layers

In some embodiments, one or more insulating layers may be prepared uponthe front surface, the back surface, or both the front and back surfacesof the single crystal semiconductor handle wafer 100 or upon the frontsurface, the back surface, of both the front and back surfaces of asingle crystal semiconductor donor wafer by a chemical vapor depositionprocess, such as plasma enhanced chemical vapor deposition or lowpressure chemical vapor deposition. In some embodiments, an insulatinglayer comprising a semiconductor oxide (e.g., silicon dioxide) isdeposited by an oxygen chemical vapor deposition treatment. In someembodiments, an insulating layer comprising a semiconductor nitride(e.g., silicon nitride) is deposited by a nitrogen chemical vapordeposition treatment. In some embodiments, an insulating layercomprising a semiconductor oxynitride (e.g., silicon oxynitride) isdeposited by a chemical vapor deposition treatment comprising nitrogenand oxygen precursors. A wide variety of wafer configurations may besubjected to oxygen chemical vapor deposition treatment and/or nitrogenchemical vapor deposition treatment. For example, plasma enhancedchemical vapor deposition enables the plasma oxidation or nitridation ofa single side, preferably the front side, of the single crystalsemiconductor handle wafer and/or single crystal semiconductor donorwafer. Low pressure chemical vapor deposition is generally a blanketdeposition technique, which plasma oxidizes and/or nitrides bothsurfaces of a wafer. One or more insulating layers may be deposited bychemical vapor deposition on the front surface 102 of the single crystalsemiconductor handle wafer 100. In still further embodiments of thepresent invention, one or more insulating layers may be deposited uponthe single crystal semiconductor donor wafer by chemical vapordeposition. Deposition on a single side of the wafer enables theelimination of a later backside oxide or backside nitride layer removalstep.

In some embodiments, single sided deposition may be achieved by plasmaenhanced chemical vapor deposition. The oxygen plasma and/or nitrogenplasma surface activation tool is a commercially available tool, such asthose available from EV Group, such as EVG®810LT Low Temp PlasmaActivation System. General requirements of a plasma enhanced CVD chamberinclude a reactor with various electrode designs, power generationelectronics, impedance matching network to transfer power to the gasload, mass flow controllers for input gases, and pressure controlsystems. Typical systems are vertical tube reactors powered by aninductively coupled RF source. The single crystal semiconductor handlewafer 100 and/or donor wafer is loaded into the chamber and placed on aheated support chamber. The chamber is evacuated and backfilled with anoxygen gas source and/or a nitrogen gas source in a carrier gas, such asargon, to a pressure less than atmospheric to thereby create the plasma.Oxygen and/or water are suitable source gases for plasma oxidetreatment. Ammonia and/or nitrogen and/or nitric oxide (NO) and/ornitrous oxide (N₂O) gas are suitable source gases for plasma nitridetreatment. Oxynitride films may be deposited by including oxygen andnitrogen gas sources. Additionally, the use of nitric oxide or nitrousoxide additionally incorporates oxygen in to the insulating layer,thereby depositing an oxynitride film. To deposit a silicon nitride or asilicon dioxide plasma film, suitable silicon precursors include methylsilane, silicon tetrahydride (silane), trisilane, disilane, pentasilane,neopentasilane, tetrasilane, dichlorosilane (SiH₂Cl₂), trichlorosilane(SiHCl₃), silicon tetrachloride (SiCl₄), tetra-ethyl orthosilicate(Si(OCH₂CH₃)₄), among others. The flow rate ratios of the gaseoussilicon precursor and the gaseous oxygen and/or nitrogen precursor maybe between about 1/200 and about 1/50, such as about 1/100.

In some embodiments, a layer deposited with silane and nitrous oxideproduces a less-conformal layer with less variability in the film stresswith deposition conditions (temperature and frequency); while TEOS-basedoxides are more conformal, have a higher variation in film stress withdeposition conditions. In general, an oxide film exhibits compressivestress, but an oxide film exhibits tensile stress for some TEOS-basedprocesses. In some embodiments, PECVD nitride deposition is done usingsilane (or DCS) and ammonia (NH₃). Film stress can be tuned with processconditions (temperature and plasma frequency). In general, a nitridefilm exhibits tensile stress. It should be noted that depending on oxideand nitride deposition process the overall wafer stress can be balanced,since oxide is compressive and nitride is tensile. It is desirable tobalance the stresses for a handle wafer, so that the wafer warp (bow) isnot excessive. Severely-high warp may lead to issues in bonding, layertransfer, post SOI wafer manufacturing processing or the customer's fab.

Suitably, Ar is added as a carrier gas. Plasma deposition may occur at atemperature between about 20° C. and about 400° C. Insulating layers maybe at least about 1 nanometer thick, or at least about 10 nanometersthick, such as between about 10 nanometers and about 10,000 nanometers,between about 10 nanometers and about 5,000 nanometers, between 50nanometers and about 500 nanometers, or between about 100 nanometers andabout 400 nanometers, such as about 50 nanometers, about 75 nanometers,about 85 nanometers, about 100 nanometers, about 150 nanometers, about175 nanometers, or about 200 nanometers. Deposition rates achievable byPECVD may be between about 100 angstroms/minute and about 1000angstroms/minute.

In some embodiments, the PECVD deposition, particularly of siliconnitride layers, may be enhanced by microwave excitation. Microwaveexcited PECVD is advantageous since the discharge region can beseparated from the reaction region, which results in a lower damagedeposited layer. Precursor compounds, e.g., silane, oxygen, and ammonia,are excited by a microwave discharge, e.g., in a 2.45 GHz microwave, andthe excited gases diffuse from the plasma chamber to the reactionchamber. Such films may be tuned to be at or near stoichiometry, e.g.,Si₃N₄.

Plasma deposition may be varied to tune the properties of thesemiconductor oxide (e.g., silicon dioxide), semiconductor nitride(e.g., silicon nitride), or semiconductor oxynitride (e.g., siliconoxynitride). For example, the pressure, flow rate, temperature, andrelative ratio of precursors, e.g., ratio of NH₃ to N₂O gases, may tunethe silicon and nitride molar ratios of the plasma deposited nitridelayer. Additionally, inclusion of an oxygen precursor incorporatesoxygen to prepare an oxynitride layer. In some embodiments, plasmadeposition may occur in an ambient atmosphere comprising silicon andnitrogen precursors to thereby deposit a silicon nitride layer on thehandle wafer and/or donor wafer. After a duration sufficient to depositnitride, an oxygen precursor may be introduced into the atmosphere tothereby deposit oxynitride. The oxygen concentration in the handlesemiconductor oxynitride layer may vary according to a gradient, wherebythe oxygen concentration is low at the interface with the handlesemiconductor nitride layer and increases in the perpendicular directionaway from the surface of the handle semiconductor oxynitride layer.After a duration sufficient to deposit an oxynitride layer, the flow ofthe nitrogen precursor may be ceased and deposition may continue onlywith silicon precursor and an oxygen gas source to thereby deposit aninsulating layer comprising semiconductor oxide, e.g., silicon dioxide.In some embodiments, a dielectric layer may be deposited by plasmatechniques comprising a semiconductor nitride (e.g., silicon nitride)layer and a semiconductor oxynitride (e.g., silicon oxynitride) layer.In some embodiments, a dielectric layer may be deposited by plasmatechniques comprising a semiconductor nitride (e.g., silicon nitride)layer, a semiconductor oxynitride (e.g., silicon oxynitride) layer, anda semiconductor oxide (e.g., silicon dioxide) layer. Advantageously,plasma deposition of a dielectric layer comprising multiple insulatinglayers may occur continuously, i.e., without interruption, by varyingthe ratios and identities of the process gases.

In some embodiments, double sided deposition may be achieved by lowpressure chemical vapor deposition. The LPCVD process can be done in acold or hot walled quartz tube reactor. Hot walled furnaces allow batchprocessing and therefore high throughput. They also provide good thermaluniformity, and thus result in uniform films. A disadvantage of hot wallsystems is that deposition also occurs on the furnace walls, so thatfrequent cleaning or replacement of the tube is necessary to avoidflaking of the deposited material and subsequent particle contamination.Cold wall reactors are lower maintenance, as there is no film depositionon the reactor walls. The low pressure chemical vapor semiconductornitride (e.g., silicon nitride), semiconductor oxynitride (e.g., siliconoxynitride), or semiconductor oxide (e.g., silicon dioxide) may beformed at pressures between about 0.01 Torr and about 100 Torr, such asbetween about 0.1 Torr and about 1 Torr in a low pressure chemical vapordeposition. Temperatures may range between 425° C. and 900° C. Suitableprecursors include those listed for PECVD. That is, LPCVD may be usefulfor the blanket deposition of silicon dioxide layers, silicon nitridelayers, and silicon oxynitride layers, on the front and back surfaces ofa handle wafer and/or a donor wafer.

The refractive index of the insulating layers may be tuned in the rangebetween about 1.2 and about 3, such as between about 1.4 and about 2, orbetween about 1.5 and about 2. Post processing anneal and chemical vapordeposition of silicon dioxide, SiO₂, is possible to further tune thebond interface or hydrogen content of the film. The bonding between thehandle wafer and the donor wafer benefits from roughness of less thanabout 5 angstroms, according to the root mean square method over a 2micrometer by 2 micrometer surface area, RMS _(2×2 um2). Generally thiscan be achieved in a plasma deposition with controlled inductivelycoupled plasma and lowering the bias power below the rougheningthreshold. Successful layer transfer has been demonstrated on plasmadeposited films with roughness of about 5 angstroms or less.

Silicon oxynitride comprises a material having a composition that has achemical formula Si_(x)O_(y)N_(z). In its amorphous form, the values ofx, y, and z may vary continuously between SiO₂ (silicon dioxide) andSi₃N₄ (silicon nitride). Accordingly, in a silicon oxynitride layer, thevalues of y and z are both greater than 0. A known crystalline form ofsilicon oxynitride is Si₂ON₂. According to some embodiments, the siliconoxynitride may be deposited in a gradient fashion, such that thecomposition of the film and thus the refractive index of the film mayvary in a gradient fashion. In some embodiments, silicon oxynitride maybe deposited upon a silicon nitride film by the gradual introduction ofan oxygen precursor (e.g., oxygen, water, N₂O) into the depositionambient atmosphere, which may comprise a silicon precursor and anitrogen precursor, e.g., ammonia. The ratio of NH₃:N₂O may be varied,that is, lowered, during deposition to gradually increase the oxygencontent in the silicon oxynitride layer. In some embodiments, afterdeposition of a gradient silicon oxynitride layer, all nitrogenprecursors are eliminated from the deposition atmosphere, and theatmosphere contains silicon precursors and oxygen precursors, whichenables deposition of a silicon dioxide layer on the silicon oxynitridelayer. According to some embodiments, the refractive index range of thesilicon oxynitride film may vary between 2.0 for silicon nitride and1.45 for silicon dioxide.

Silicon nitride produced from PECVD is structurally distinct fromsilicon nitride deposited according to conventional chemical or physicalvapor deposition techniques. Conventional CVD or PVD depositiongenerally results in a silicon nitride layer having a stoichiometry ofSi₃N₄. Plasma processes can be controlled to deposit a film having acomposition such as Si_(x)N_(y)H_(z) depending on the ratios of inputreactant gases, power level, wafer temperature, and overall reactorpressure. Pathways in a plasma system exist to form Si—N, Si═N and Si≡Nbonds. This is due to the fact that plasma energies are a hammer thatproduce Si_(x)H_(z) and N_(y)H_(z) species. For example, the refractiveindex and optical gap change dramatically with the Si/N ratio. At highersilane concentrations, the films become Si rich and may reach an indexof refraction up to 3.0 (compared to 2 for LPCVD). Other properties thatmay be influenced include dielectric constant, breakdown, mechanical,and chemical (etch rate).

V. Densification Anneal

The handle wafer and/or donor wafer comprising one or more oxide andnitride layers may be subjected to a densification anneal. Adensification anneal may occur for a duration between about 10 minutesand about 10 hours, such as between about 30 minutes and about 6 hours,or between about 1 hour and about 4 hours, such as about 4 hours. Theambient atmosphere of the densification anneal is preferably inert, suchas a nitrogen or argon atmosphere. The temperature of the densificationanneal may be at least about 900° C., such as between about 900° C. andabout 1100° C., or between about 1000° C. about 1100° C. Advantageously,densified thermal or CVD oxide has lower stress than as-deposited oxide.Further, the densification anneal reduces the surface roughness of thedielectric layer.

In some embodiments, a densification anneal may reduce the layerthickness of a nitride layer by as much as about 20%, such as 15%, orabout 14%, or about 13%. In some specific embodiments, the densificationanneal may reduce the layer thickness of a nitride layer by betweenabout 13.4% to about 13.8%. The thickness reduction is calculatedaccording to the equation: 100× [(mean nitride thickness afteranneal−mean nitride thickness before anneal)/(mean nitride thicknessbefore anneal)]}. In some embodiments, a densification anneal may reducethe layer thickness of an oxide layer by as much as about 2%, or about1%. These changes in layer thicknesses apply to both PECVD nitride overthermal oxide and PECVD nitride over PECVD oxide). The warp of thehandle wafer may increase with the densification anneal. In somespecific embodiments in which the handle wafer comprises a PECVD nitridelayer over a PECVD oxide layer, the increase in wafer bow may be as muchas about 25 micrometers, such as about 20 micrometers. In some specificembodiments in which the handle wafer comprises a PECVD nitride layerover a thermal oxide layer, the increase in wafer bow may be as much as40 micrometers, such as about 30 micrometers. However, densificationinduced wafer bow or warp may decrease as a result of nitride layerthinning in the subsequent CMP step. The warp (or bow) increases becausethe film is being densified and so the stress from this layer isincreasing. With PECVD oxide the stress is compressive, while for PECVDnitride it is tensile; hence the case of PECVD nitride over PECVD oxide,the oxide and nitride densification partially cancel resulting in alower delta warp.

VI. Smoothing Processes

The bond between the donor wafer and the handle wafer is strengthenedwhen the bonding surfaces are smooth and has low defect density. Asmooth surface enables the bond to survive the mechanical cleaving step.Even in embodiments wherein the wafer is subjected to densificationanneal, the strength of the bond is directly related to the smoothnessof the bond surfaces. In general, the surface roughness of bare siliconis sufficiently smooth to yield a sufficiently strong bond. Waferscomprising one or more layers, e.g., an oxide and a nitride layer, mayhave rougher surfaces than bare silicon, which may impact the bondstrength. Thermally deposited oxide layers have a rougher surface thanbare silicon, but the surface is generally sufficiently smooth to yieldan acceptable bond. Nitride layers deposited by LPCVD nitride or oxideor nitride layers deposited by PECVD are not generally smooth enough toyield a strong enough bond.

Accordingly, in some embodiments, the wafers are subjected to chemicalmechanical polishing to thereby provide wafers having surfaces smoothenough for bonding. During polishing, the front and/or back surfaces ofthe wafer are contacted with an aqueous slurry comprising an abrasiveagent and a polymeric rheological modifier. In general, abrasivecomponents of the polishing slurry comprise abrasive particles, e.g.,colloidal silica, alumina, silicon carbide, diamond, boron carbide,tungsten carbide, titanium nitride, cesium oxide, etc. Polymericrheological modifiers include polymers such as polyether polyol, pectinderivatives, polyacrylamide, polymethyacrylic acid, cellulosicstabilizers such as cellulose, modified cellulose derivatives, celluloseethers, starch modified cellulose derivatives, cellulose ethers, starchderivatives, hydroxyethylcellulose, hydroxypropylcellulose, andhexaethyl cellulose. Other components may be included in the CMP liquid,as is known in the art. The polished wafers may be cleaned in SC1/SC2solution and rinsed.

Chemical mechanical polishing may yield sufficiently smooth surfaces forwafer bonding. However, this requires deposition an additional thicknessof the layer since CMP removes at least some of the deposited layer,which reduces throughput and adds manufacturing cost.

Accordingly, in some embodiments, wafer surfaces may be smoothed by ionmilling. Ion milling uses physical etching to removal material.Typically, argon ions and/or helium ions can be accelerated under vacuumto impinge on the surface to be milled. Ions are produced in a vacuumdischarge chamber by an electrical discharge between an electronemitting cathode and a surrounding anode at a voltage of up to about2000 volts. A non-oxidizing atmosphere of argon, nitrogen, etc., istypically used in the vacuum chamber, at a pressure of the order of1×10⁻³ to 1×1.0⁻⁶ torr at a current density of about 1 ma/cm² or less.In substance, this treatment accelerates the ions to the surface beingmilled at an energy of up to about 2 keV. The ions are accelerated intoa vacuum work chamber through collimating grids and a beam neutralizingfilament. The collimated ions torn a beam that impinges on the workpiecethat is normally disposed on a water cooled support. With beam currentand ion energy independently adjustable over a broad range of values,etching rates of up to about 300 angstroms per minute can be obtained.If the ion beam angle is shallow with respect to the surface, high spotson the surface can be removed without removing material at the lowestpoints on the surface. This effectively smoothens and polishes thesurface, without excessive removal of the deposited material. To beeconomical, the oxide or nitride deposited surface should be as smoothas possible. This may be accomplished by using, for example, a plasmasource excited by microwaves (e.g. see Byungwhan Kim, Suyean Kim, YongHo Seo, Dong Hwan Kim, Sun Jae Kim, and Sang Chul Jung; “SurfaceMorphology of SiN Film Deposited by a Pulsed-Plasma Enhanced ChemicalVapor Deposition at Room Temperature;” J NANOSCI NANOTECHNO; (8); pp.1-4; 2008).

Accordingly, in some embodiments of the method of the present invention,a handle wafer is first subjected to oxide deposition, including thermaloxidation or PECVD oxide deposition. Then, a smooth silicon nitride fileis deposited by a nitride deposition technique, such as thermalnitridation, or microwave excited PECVD. The resultant wafer may besubjected to an optional densification anneal. After the optionalanneal, the nitride surface is smoothed by chemical mechanical polishingor ion milling prior to bonding.

VII. Backside Layer Removal

In embodiments wherein a blanket deposition process is employed, e.g.,thermal oxidation and/or LPCVD, the backside oxide and/or nitride layerswill be removed at some point during the manufacture of the SOImultilayer structure. Removal of the backside layers may occur, forexample, before wafer bonding, after wafer bonding but before mechanicalcleaving, and after mechanical cleaving. The timing of the backsideremoval process may be varied, and each option has advantages anddisadvantages. When the backside oxide and nitride are stripped from thehandle wafer before bonding (and before CMP) the wafer may increase inwarp because of the stress differences between the bond side (withlayers) and the back side (without layers). Any damage to the bondingsurface (e.g. due to HF acid vapors which may be used to remove thebackside) may be recovered in the CMP process. Care must be taken toprevent the layers on the bond side from being etched by the backsideetchant.

Alternatively, the handle and donor can be bonded, the SOI wafer formedby cleaving at the implant interface and the backside layers removedafterwards. This has the advantage that the bond surface of the handlewafer is complete and not damaged at the very edge of the wafer.However, if the SOI wafer needs to be clamped or mounted for backsideremoval, there could be damage to the SOI face, which ultimately needsto be clean, smooth and damage free.

If the backside layers are removed before CMP and bonding, there areseveral possibilities:

-   -   i. Mask front side, plasma etch back side (nitride), wet etch        oxide, strip resist, CMP nitride layer; or    -   ii. Use a spin processor to wet etch backside film (exercising        caution to prevent the etchant from wrapping around to front        side), and CMP the nitride layer at the bond interface.

If the SOI wafer is bonded and the backside layers stripped later, thiscan be done by using a spin processor in which the wafer is mounted SOIface downward on an edge-gripping chuck or Bernoulli-type chuck.

Through the use of the “Stoney equation” for film stress, it may bepossible to balance the stresses and minimize the net stress, to therebyresult in minimal wafer bow in both embodiments. The Stoney equation is:

$r = \frac{E_{s} \times t_{S}^{2}}{\left( {1 - v} \right)_{S} \times 6 \times \sigma_{f} \times t_{f}}$

Wherein r is the curvature of warpage, t_(S) is the substrate thickness,t_(f) is the film thickness, σ_(f) is the film stress, E_(S) is theYoung's modulus of the substrate, and v is the Poisson's ratio of thesubstrate. The deposition of backside layers is advantageous becauselayers stresses may be balanced. In general, nitride layers exhibittensile stress, while oxide layers exhibit compressive stress. Thecompressive stresses on frontside and backside oxide layers having equalthicknesses substantially balance, thereby minimizing wafer bow. Inembodiments wherein deposition occurs only on the front side, thestresses of the front side oxide and nitride layers may be balancedthough careful consideration of the composition of the layers and layerthicknesses. Still further, wafers having both backside and frontsidelayers of appropriate thicknesses and compositions may balance stresseseven after removal of the backside layers.

FIG. 4 depicts a process flow according to some embodiments of thepresent invention. The removal of the backside layers according to theembodiment depicted in FIG. 4 occurs before bonding. The donor wafer maybe oxidized by any blanket deposition process, e.g., thermal oxidation.The handle wafer may be oxidized by any blanket deposition process,e.g., thermal oxidation, which is followed by blanket nitridation, e.g.,LPCVD. After deposition, either or both wafers may be subjected to adensification anneal. If a densification anneal is required, preferablythe anneal occurs before backside layer strip, as the warp of the waferwill be stabilized and the nitride layer on the bond face will be moreresistant to damage from acid (HF) fumes. Also this process ispreferably performed before the CMP or ion milling step, so that thenitride bond surface is CMP or ion-milled as the last mechanicaloperation to the bond surface before bonding (cleaning and inspectionsmay still be required before plasma activation and bonding). Then, thenitride layer and oxide layers are stripped by an appropriate method,e.g., (single sided spin etch; or mask, Dry etch removal and/orimmersion wet etch, and mask removal). For wet etching, oxide isstripped effectively using a standard hydrofluoric acid etchingsolution. For example, wet etching of silicon dioxide may occur using abuffered HF solution (6 parts ammonium fluoride (40% solution) and 1part hydrogen fluoride (49% solution)). For nitride removal by wetetching, concentrated HF (50% aqueous HF) or a solution comprising HF(50% aqueous HF) and nitric acid (70% nitric acid) and water (e.g., in a3:2:5 parts by volume solution). The compositions may be heated, e.g.,60° C. to 90° C., for faster removal rates. The etching solutions mayadditionally comprise acetic acid (HNA etching solutions) may be addedto improve the sharpness of the transition from etched to non-etchededge at the interface. Preferably, the etching solution is preventedfrom wrapping around the edge of the handle wafer and destroying thelayers on the region of the wafer which will form the terrace of the SOIwafer (or the bond between the donor and handle wafer at the terracewill not be strong enough and the layers (including top silicon mayflake or not properly transfer in cleaving). The nitride bonding surfaceis subjected to an appropriate smoothing process, such as CMP or ionmilling. Finally, both the donor and handle wafers may be subjected tocleaning and inspection. The wafers may be cleaned in conventionallinear wet benches using ozonated water and SC1/SC2 chemistries. Thecleaning tanks (particularly SC1) have megasonic transducers to aid inparticle removal by microcavitation and/or acoustic streaming. Finally,the wafers are plasma activated. A plasma is produced at reducedpressure. This plasma alters the surface of the wafers to be bonded toenhance bonding (also increase hydrophilicity of the surface (watercontact angle)). The processed handle wafer is then ready for bonding tothe donor wafer.

VIII. Process Variations

The present invention therefore involves several process variations foryielding SOI structures comprising an ONO dielectric layer and noinsulating layers on the handle wafer backside.

In some embodiments, manufacture of a semiconductor-on-oxide layer(e.g., a silicon-on-oxide layer) may have the following steps:

1. Single (e.g., front) sided deposition of an oxide layer (e.g.,silicon dioxide) on the handle wafer by plasma enhanced chemical vapordeposition (PECVD);

2. Single (e.g., front) sided deposition of a nitride layer (e.g.,silicon nitride) on the handle wafer by PECVD;

3. Optional densification anneal of the handle wafer;

4. Optional smoothing of the front surface of the handle wafer,particularly the silicon nitride layer, by chemical mechanical polishing(CMP) or ion milling; and

5. Bonding of the handle wafer, particularly, the silicon nitride layer,to an oxidized donor wafer, e.g., a silicon donor wafer comprising afront surface layer comprising silicon dioxide.

In some embodiments, manufacture of a semiconductor-on-oxide layer(e.g., a silicon-on-oxide layer) may have the following steps:

1. Double sided (e.g., front and back) deposition of an oxide layer(e.g., silicon dioxide) on the handle wafer by thermal oxidation;

2. Single (e.g., front) sided deposition of a nitride layer (e.g.,silicon nitride) on the handle wafer by PECVD;

3. Optional densification anneal of the handle wafer;

4. Optional smoothing of the front surface of the handle wafer bychemical mechanical polishing (CMP) or ion milling;

5. Bonding of the handle wafer, particularly, the silicon nitride layer,to an oxidized donor wafer, e.g., a silicon donor wafer comprising afront surface layer comprising silicon dioxide; and

6. Backside oxide (e.g., silicon dioxide) removal from the back of thehandle wafer by etching.

In some embodiments, manufacture of a semiconductor-on-oxide layer(e.g., a silicon-on-oxide layer) may have the following steps:

1. Double sided (e.g., front and back) deposition of an oxide layer(e.g., silicon dioxide) on the handle wafer by thermal oxidation;

2. Double sided (e.g., front and back) deposition of a nitride layer(e.g., silicon nitride) on the handle wafer by low pressure chemicalvapor deposition (LPCVD);

3. Plasma etching back side of the handle wafer to remove the LPCVDdeposited nitride layer;

4. Backside oxide (e.g., silicon dioxide) removal from the back of thehandle wafer by etching;

5. Optional densification anneal of the handle wafer;

6. Optional smoothing of the front surface of the handle wafer bychemical mechanical polishing (CMP) or ion milling; and

7. Bonding of the handle wafer, particularly, the silicon nitride layer,to an oxidized donor wafer, e.g., a silicon donor wafer comprising afront surface layer comprising silicon dioxide.

In some embodiments, manufacture of a semiconductor-on-oxide layer(e.g., a silicon-on-oxide layer) may have the following steps:

1. Double sided (e.g., front and back) deposition of an oxide layer(e.g., silicon dioxide) on the handle wafer by thermal oxidation;

2. Single (e.g., front) sided deposition of a nitride layer (e.g.,silicon nitride) on the handle wafer by LPCVD with masking of the frontside of the handle wafer;

3. Backside oxide (e.g., silicon dioxide) removal from the back of thehandle wafer by etching;

4. Stripping the mask;

5. Optional densification anneal of the handle wafer;

6. Optional smoothing of the front surface of the handle wafer bychemical mechanical polishing (CMP) or ion milling; and

7. Bonding of the handle wafer, particularly, the silicon nitride layer,to an oxidized donor wafer, e.g., a silicon donor wafer comprising afront surface layer comprising silicon dioxide.

Still other process variations fall within the scope of the presentinvention.

IX. Preparation of the Bonded Structure

With reference to FIG. 2, the single crystal semiconductor handle wafer100, such as a single crystal silicon handle wafer, prepared accordingto the method described herein is next bonded to a single crystalsemiconductor donor wafer 500, which is prepared according toconventional layer transfer methods. In preferred embodiments, thesingle crystal semiconductor donor wafer 500 comprises a materialselected from the group consisting of silicon, silicon carbide, silicongermanium, gallium arsenide, gallium nitride, indium phosphide, indiumgallium arsenide, germanium, and combinations thereof. Depending uponthe desired properties of the final integrated circuit device, thesingle crystal semiconductor (e.g., silicon) donor wafer 500 maycomprise electrically active dopants, such as boron (p type), gallium (ptype), aluminum (p type), indium (p type), phosphorus (n type), antimony(n type), and arsenic (n type). The resistivity of the single crystalsemiconductor (e.g., silicon) donor wafer may range from 1 to 50 Ohm-cm,typically, from 5 to 25 Ohm-cm. The single crystal semiconductor donorwafer 500 may be subjected to standard process steps includingoxidation, implant, and post implant cleaning. Accordingly, a singlecrystal semiconductor donor wafer 500 that has been etched and polishedand optionally oxidized is subjected to ion implantation to form adamage layer in the donor substrate.

In some embodiments, the single crystal semiconductor donor wafer 500comprises a dielectric layer. The dielectric layer may comprise one ormore insulating layers formed on the front surface of the single crystalsemiconductor donor wafer 500. In some embodiments, the dielectric layer420 comprises multiple layers of insulating material, for example, asdepicted in FIG. 2, although other configurations are within the scopeof this invention. Each insulating layer may comprise a materialselected from the group consisting of silicon dioxide, silicon nitride,and siliconoxynitride. Each insulating layer may have a thickness of atleast about 1 nanometer thick, or at least about 10 nanometers thick,such as between about 10 nanometers and about 10,000 nanometers, betweenabout 10 nanometers and about 5,000 nanometers, between 50 nanometersand about 500 nanometers, or between about 100 nanometers and about 400nanometers, such as about 50 nanometers, about 75 nanometers, about 85nanometers, about 100 nanometers, about 150 nanometers, about 175nanometers, or about 200 nanometers. As depicted in FIG. 2, thedielectric layer 420 comprises three layers. One, two, or three of thelayers may be formed upon the single crystal semiconductor handle wafer100. One, two, or three of the layers may be formed upon the singlecrystal semiconductor donor wafer 500. Still further, one or two of thelayers may be formed upon the single crystal semiconductor handle wafer100, and one or two of the layers may be formed upon the single crystalsemiconductor donor wafer 500.

Ion implantation may be carried out in a commercially availableinstrument, such as an Applied Materials Quantum II, a Quantum LEAP, ora Quantum X. Implanted ions include He, H, H₂, or combinations thereof.Ion implantation is carried out as a density and duration sufficient toform a damage layer in the semiconductor donor substrate. Implantdensity may range from about 10¹² ions/cm² to about 10¹⁷ ions/cm², suchas from about 10¹⁴ ions/cm² to about 10¹⁷ ions/cm², such as from about10¹⁵ ions/cm² to about 10¹⁶ ions/cm². Implant energies may range fromabout 1 keV to about 3,000 keV, such as from about 10 keV to about 3,000keV. Implant energies may range from about 1 keV to about 3,000 keV,such as from about 5 keV to about 1,000 keV, or from about 5 keV toabout 200 keV, or from 5 keV to about 100 keV, or from 5 keV to about 80keV. The depth of implantation determines the thickness of the singlecrystal semiconductor device layer in the final SOI structure. The ionsmay be implanted to a depth between about 100 angstroms and about 30,000angstroms, such as between about 200 angstroms and about 20,000angstroms, such as between about 2000 angstroms and about 15,000angstroms, or between about 15,000 angstroms and about 30,000 angstroms.In some embodiments it may be desirable to subject the single crystalsemiconductor donor wafers, e.g., single crystal silicon donor wafers,to a clean after the implant. In some preferred embodiments, the cleancould include a Piranha clean followed by a DI water rinse and SC1/SC2cleans.

In some embodiments of the present invention, the single crystalsemiconductor donor wafer 500 having an ion implant region thereinformed by He⁺, H⁺, H₂ ⁺, and any combination thereof ion implant isannealed at a temperature sufficient to form a thermally activatedcleave plane in the single crystal semiconductor donor substrate. Anexample of a suitable tool might be a simple Box furnace, such as a BlueM model. In some preferred embodiments, the ion implanted single crystalsemiconductor donor substrate is annealed at a temperature of from about200° C. to about 350° C., from about 225° C. to about 325° C.,preferably about 300° C. Thermal annealing may occur for a duration offrom about 2 hours to about 10 hours, such as from about 2 hours toabout 8 hours. Thermal annealing within these temperatures ranges issufficient to form a thermally activated cleave plane. After the thermalanneal to activate the cleave plane, the single crystal semiconductordonor substrate surface is preferably cleaned.

In some embodiments, the ion-implanted and optionally cleaned andoptionally annealed single crystal semiconductor donor wafer 500 issubjected to oxygen plasma and/or nitrogen plasma surface activation. Insome embodiments, the oxygen plasma surface activation tool is acommercially available tool, such as those available from EV Group, suchas EVG®810LT Low Temp Plasma Activation System. The ion-implanted andoptionally cleaned single crystal semiconductor donor wafer is loadedinto the chamber. The chamber is evacuated and backfilled with O₂ to apressure less than atmospheric to thereby create the plasma. The singlecrystal semiconductor donor wafer is exposed to this plasma for thedesired time, which may range from about 1 second to about 120 seconds.Oxygen plasma surface oxidation is performed in order to render thefront surface of the single crystal semiconductor donor substratehydrophilic and amenable to bonding to a single crystal semiconductorhandle substrate prepared according to the method described above.

The hydrophilic front surface of the single crystal semiconductor donorwafer 500 and the front surface of single crystal semiconductor handlewafer 100 are next brought into intimate contact to thereby form abonded structure. According to the methods of the present invention,each of the front surface of the single crystal semiconductor donorwafer 500 and the front surface of single crystal semiconductor handlewafer 100 may comprise one or more insulating layers. The insulatinglayers form the dielectric layer of the bonded structure. With referenceto FIG. 2, an exemplary dielectric layer 420 is shown. As depictedtherein, the dielectric layer 420 of the bonded structure may comprise afirst oxide layer 200, a nitride layer 300, a second oxide layer 400.Further configurations are within the scope of this disclosure.

Since the mechanical bond may be relatively weak, the bonded structuremay be further annealed to solidify the bond between the single crystalsemiconductor donor wafer 500 and the single crystal semiconductorhandle wafer 100. In some embodiments of the present invention, thebonded structure is annealed at a temperature sufficient to form athermally activated cleave plane in the single crystal semiconductordonor substrate. An example of a suitable tool might be a simple Boxfurnace, such as a Blue M model. In some embodiments, the bondedstructure is annealed at a temperature of from about 200° C. to about400° C., from about 300° C. to about 400° C., such as from about 350° C.to about 400° C.

In some embodiments, the anneal may occur at relatively high pressures,such as between about 0.5 MPa and about 200 MPa, such as between about0.5 MPa and about 100 MPa, such as between about 0.5 MPa and about 50MPa, or between about 0.5 MPa and about 10 MPa, or between about 0.5 MPaand about 5 MPa. In conventional bonding methods, the temperature islikely limited by the “autocleave”. This occurs when the pressure of theplatelets at the implant plane exceeds the external isostatic pressure.Accordingly, conventional anneal may be limited to bonding temperaturesbetween about 350° C. and about 400° C. because of autocleave. Afterimplantation and bond, the wafers are weakly held together. But the gapbetween the wafers is sufficient to prevent gas penetration or escape.Weak bonds can be strengthened by heat treatments, but the cavitiesformed during implant are filled with gas. While heating, the gas insidethe cavities pressurizes. It is estimated that the pressure may reach0.2-1 GPa (Cherkashin et al., J. Appl. Phys. 118, 245301 (2015)),depending on the dosage. When the pressure exceeds a critical value, thelayer delaminates. This is referred to as an autocleave or thermalcleave. It prevents higher temperature or longer time in the anneal.According to some embodiments of the present invention, bonding occursat elevated pressures, e.g., between about 0.5 MPa and about 200 MPa,such as between about 0.5 MPa and about 100 MPa, such as between about0.5 MPa and about 50 MPa, or between about 0.5 MPa and about 10 MPa, orbetween about 0.5 MPa and about 5 MPa, which thereby enables bonding atelevated temperatures. In some embodiments, the bonded structure isannealed at a temperature of from about 300° C. to about 700° C., fromabout 400° C. to about 600° C., such as between about 400° C. and about450° C., or even between about 450° C. and about 600° C., or betweenabout 350° C. and about 450° C. Increasing the thermal budget will havea positive effect on the bond strength. Thermal annealing may occur fora duration of from about 0.5 hours to about 10 hour, such as betweenabout 0.5 hours and about 3 hours, preferably a duration of about 2hours. Thermal annealing within these temperatures ranges is sufficientto form a thermally activated cleave plane. In conventional bondinganneals, the edge of both the handle wafer and donor wafer may becomefar apart due to the roll off. In this area, there is no layer transfer.It is called the terrace. Pressurized bonding is expected to reduce thisterrace, extending the SOI layer further out towards the edge. Themechanism is based on trapped pockets of air being compressed and“zippering” outwards. After the thermal anneal to activate the cleaveplane, the bonded structure may be cleaved.

After the thermal anneal, the bond between the single crystalsemiconductor donor wafer 500 and the single crystal semiconductorhandle wafer 100 is strong enough to initiate layer transfer viacleaving the bonded structure at the cleave plane. Cleaving may occuraccording to techniques known in the art. In some embodiments, thebonded structure may be placed in a conventional cleave station affixedto stationary suction cups on one side and affixed by additional suctioncups on a hinged arm on the other side. A crack is initiated near thesuction cup attachment and the movable arm pivots about the hingecleaving the wafer apart. Cleaving removes a portion of thesemiconductor donor wafer, thereby leaving a single crystalsemiconductor device layer 600, preferably a silicon device layer, onthe semiconductor-on-insulator composite structure. See FIG. 3.

After cleaving, the cleaved structure may be subjected to a hightemperature anneal in order to further strengthen the bond between thetransferred device layer 600 and the single crystal semiconductor handlewafer 100. An example of a suitable tool might be a vertical furnace,such as an ASM A400. In some preferred embodiments, the bonded structureis annealed at a temperature of from about 1000° C. to about 1200° C.,preferably at about 1000° C. Thermal annealing may occur for a durationof from about 0.5 hours to about 8 hours, preferably a duration of about4 hours. Thermal annealing within these temperatures ranges issufficient to strengthen the bond between the transferred device layerand the single crystal semiconductor handle substrate.

After the cleave and high temperature anneal, the bonded structure maybe subjected to a cleaning process designed to remove thin thermal oxideand clean particulates from the surface. In some embodiments, the singlecrystal semiconductor device layer may be brought to the desiredthickness and smoothness by subjecting to a vapor phase HCl etch processin a horizontal flow single wafer epitaxial reactor using H₂ as acarrier gas. In some embodiments, the semiconductor device layer 600 mayhave a thickness between about 20 nanometers and about 3 micrometers,such as between about 20 nanometers and about 2 micrometers, such asbetween about 20 nanometers and about 1.5 micrometers or between about1.5 micrometers and about 3 micrometers.

In some embodiments, an epitaxial layer may be deposited on thetransferred single crystal semiconductor device layer 600. A depositedepitaxial layer may comprise substantially the same electricalcharacteristics as the underlying single crystal semiconductor devicelayer 600. Alternatively, the epitaxial layer may comprise differentelectrical characteristics as the underlying single crystalsemiconductor device layer 600. An epitaxial layer may comprise amaterial selected from the group consisting of silicon, silicon carbide,silicon germanium, gallium arsenide, gallium nitride, indium phosphide,indium gallium arsenide, germanium, and combinations thereof. Dependingupon the desired properties of the final integrated circuit device, theepitaxial layer may comprise electrically active dopants, such as boron(p type), gallium (p type), aluminum (p type), indium (p type),phosphorus (n type), antimony (n type), and arsenic (n type). Theresistivity of the epitaxial layer may range from 1 to 50 Ohm-cm,typically, from 5 to 25 Ohm-cm. In some embodiments, the epitaxial layermay have a thickness between about 20 nanometers and about 3micrometers, such as between about 20 nanometers and about 2micrometers, such as between about 20 nanometers and about 1.5micrometers or between about 1.5 micrometers and about 3 micrometers.

The finished SOI wafer comprises the single crystal semiconductor handlewafer 100, the dielectric layer 420, and the semiconductor device layer600, may then be subjected to end of line metrology inspections andcleaned a final time using typical SC1-SC2 process.

The following non-limiting examples illustrate embodiments of thepresent invention.

EXAMPLES Comparative Example 1 Fabrication of SOI Wafers with NoBackside Removal

This comparative example illustrates SOI manufacture lacking any processsteps to remove the backside layers. Twenty-five (25) 200 mm diametersingle crystal silicon p-type (boron doped) wafers having resistivity of15 to 16 Q-cm were prepared. The oxygen concentration was measured to be8.0 PPMA (SEMI MF 1188-1105). These wafers are the handle wafers of thefinal ONO SOI structure. The handle wafers were oxidized by wet thermaloxidation in an ASM A400XT vertical tube to envelope the wafers with asilicon dioxide layer having a nominal oxide thickness of 200 nm. Thewafers were subjected to LPCVD nitride deposition in a tube furnace toenvelope the wafers with a deposited nitride thickness target of 175 nm.The bond surface of each of twenty-five wafers was chemicallymechanically polished using a Mirra Mesa 200 mm CMP tool with silicapolishing slurry to a target thickness of 75 nm. For the set-up, thefirst six wafers of the lot were polished for different durations,cleaned, and then the nitride layer thickness measured to establish theremoval rate and set the CMP polish time. Then, the remaining 19 waferswere polished at the set polish time. The wafers were cleaned andmeasured for nitride layer thickness, flatness, warp, and KLA Tencor SP1surface inspection. One wafer (one of the original six polish rateset-up wafers) was subjected to metals sampling, leaving 24 wafers forbonding.

A parallel group of twenty-five (25) 200 mm diameter donor siliconp-type (boron doped) wafers having resistivity of 9.5 Ω-cm wereprepared. The oxygen concentration was measured to be 8.0 PPMA (SEMI MF1188-1105). The donor wafers were oxidized by wet thermal oxidation inan ASM A400XT vertical tube to envelope the wafers with a silicondioxide layer having a nominal oxide thickness of 200 nm. Cleaning andsurface inspection processes followed to remove any particles generatedby the oxidation process or wafer handling during oxide metrology andflatness/warp measurement. Next, three donor wafers were implanted usingan Applied Materials Quantum X ion implanter, first with helium (dose1.1×10¹⁶ atoms/cm² using an energy of 60 KeV) and followed with H₂ ⁺ions (dose 0.55×10¹⁶ atoms/cm² using an energy of 71 KeV). The donorwafers passed through a series of rough and fine cleaning and inspectionto remove any contaminants or particles produced by the implantationprocess or handling. This produced a uniform, clean particle-freesurface required for good bonding.

The twenty-four handle wafers comprising NO dielectric layers preparedas described above were bonded to 24 of the donor wafers produced asdescribed above. The protocol to prepare SOI structures was as follows:

(a) Pairing: A pair of wafers was sequenced so that a donor wafer wasmatched with a handle wafer;

(b) Plasma Activation: The bond interface of the donor wafer and thebond interface of the handle wafer for each pair were plasma activatedusing an EVG 800 low-temperature series plasma activation using nitrogengas at low pressure (˜0.45 mbar) and a top electrode power of ˜60 W at afrequency of ˜400 kHz and a bottom electrode power of ˜500 W at afrequency of ˜50 kHz. The electrodes were energized (at operatingpressure) for a total of 15 s. The plasma activation was donesequentially (one bond surface at a time) for donor bond surface andhandle bond surface;

(c) Rinsing: Each wafer was removed from the plasma activation chamberand the activated bond surface is rinsed in deionized wafer. The rinsedwafers were spun dry;

(d) Contact Bonding: The donor and handle bond pair was arranged in abond chamber with bond surface facing each other. The bond chamberpressure was reduced to about 150 mbar, and the wafers were intimatelycontacted. The wafer separation was limited by Van der Waal's repulsiveforces. A contact pin was applied to the external surface of the donorwafer near an edge. The contact force is greater than the local Van derWaal's repulsive force. The contact pin force caused a bond wave toemanate from the contact point and within the confines of the wave thetwo bond surfaces bonded. The bond wave moved outward to the edges inall direction. Once the wave completely moved to the edge at the entirecircumference of the bond pair the bonding process (for this stage) iscomplete;

(e) Anneal: The twenty-four bond pairs were collected in a processcassette. The bond pairs were annealed to strengthen the bond in aLindbergh Blue M convection oven at a temperature ranging from about250° C. to about 375° C. for between 1 to 4 hours. The annealadditionally nucleates and grows hydrogen and helium filled plateletsalong the implantation plane in the donor wafer. Anneals at temperaturesin the range of 425 to 475° C. or higher may cause the platelets to growand merge into one another forming a cleave plane, which could result inthermal cleaving. In this example, the wafers were bond annealed at 350°C. for 2 hours (with ramp-up and ramp-down time collectively of 35minutes);

(f) Mechanical Cleaving: Upon cooling sufficiently, the bond pairs weremechanically cleaved to form the SOI wafer with ONO BOX structure. Thestructures were cleaved by chucking the bond pair with handle side down.A series of suction cups (with vacuum applied) mounted on a pivotingupper arm applied an upward force to the donor wafer. A razor blade wasmoved to contact the bond pair between edge contours and apply a force.The force of the razor blade initiated a crack in the donor wafer. Thecrack reaches the depth of the implant plane (zone) filled withplatelets and micro-fractures. The crack spreads in all directions withthe applied stress from the upper arm pulling on the back side of thedonor wafer. The remnant of the donor wafer separated from thenewly-formed SOT wafer and this remnant/spent donor wafer was peeledaway from the SOT wafer as the cleave wave propagates;

(g) Surface cleaning and inspection: The newly-formed SOI wafers werecleaned and inspected to remove any particles which may have beenproduced in cleaving or wafer handling. The thickness of the layers(bottom oxide, nitride, top oxide and top-silicon) and flatness or warpwere measured;

(h) Strengthening anneal: The structures were annealed to furtherstrengthen the bond interface at 1000° C. for 4 hrs (pre-epitaxysmoothing anneal, or PESA). The structures are cleaned to remove oxidethat may form during the anneal; and

(i) Epitaxial thinning: Cleave damage was removed and the top siliconlayer was thinned in an epitaxy reactor. The top silicon was thinnedfrom approximately 225 nm to a target of 148 nm. Afterwards, the waferswere cleaning and inspected. The cleaning process removes about 3 nmleaving the final top silicon thickness of 145 nm. The top oxidethickness is about 200 nm, the nitride thickness is about 75 nm and thebottom oxide thickness is about 200 nm.

The nitride-to-oxide bond quality using this process was excellent. TEMcross-section images of the bond interfaces showed no apparent voids orincomplete bond surfaces. Also, HF undercut data (examination of thewicking inward of HF at the bond interface) was very low, averagingabout 2.5 micrometers. Typically, SOT wafers made using a lowertemperature so-called PESA process exhibit higher HF undercut of atleast 10 micrometers and often near 50 micrometers or above. This is dueto the fact that at the lower-temperature PESA process the oxide doesnot flow, while at the higher temperatures (e.g. 1125° C.) the oxidedoes flow. However, at higher temperatures, wafer is more prone to slipand possibly for some SOI products (e.g. Charge-Trap-Layer (CTL) SOTwafers) the higher temperatures will force the polysilicon CTL layer torecrystallize resulting in a loss in functionality (reduction of HD2losses).

Example 2 Fabrication of SOI Wafers with Handle Substrates Subjected toSingle Sided Oxide and Nitride Deposition

Three handle silicon wafers (200 mm diameter) were subjected to a PECVDoxide deposition process, which deposited a PECVD oxide layer having athickness of 200 nm onto the bonding surface. The deposition tool was aLAM Sequel C2. Atop the PECVD oxide layer was deposited a 175 nm thicklayer of PECVD nitride using the same PECVD deposition tool. One waferwas subjected to a densification anneal in which a wafer subjectannealed for 4 hours at 1100° C. in atmospheric-pressure nitrogenambient. Two wafers (one of which was densified) are chemicallymechanically polished on a Mira Mesa CMP tool to leave a nitride layerthickness of about 75 nm. Accordingly, one handle wafer was neitherdensified nor polished. Post-polish cleaning process followed to producea clean, dry surface. A fine clean and surface inspection was thenperformed to produce a uniform, clean, particle-free surface requiredfor good bonding.

Three donor wafers were oxidized by wet thermal oxidation in an ASMA400XT vertical tube to envelope the wafers with a silicon dioxide layerhaving a nominal oxide thickness of 200 nm. Cleaning and surfaceinspection processes followed to remove any particles generated by theoxidation process or wafer handling during oxide metrology andflatness/warp measurement. Next, three donor wafers were implanted usingan Applied Materials Quantum X ion implanter, first with helium (dose1.1×10¹⁶ atoms/cm² using an energy of 60 KeV) and followed with H₂ ⁺ions (dose 0.55×10¹⁶ atoms/cm² using an energy of 71 KeV). The donorwafers passed through a series of rough and fine cleaning and inspectionto remove any contaminants or particles produced by the implantationprocess or handling. This produced a uniform, clean particle-freesurface required for good bonding.

The protocol to prepare SOI structures was as follows:

(a) Pairing: A pair of wafers was sequenced so that a donor wafer wasmatched with a handle wafer;

(b) Plasma Activation: The bond interface of the donor wafer and thebond interface of the handle wafer for each pair were plasma activatedusing an EVG 800 low-temperature series plasma activation using nitrogengas at low pressure (˜0.45 mbar) and a top electrode power of ˜60 W at afrequency of ˜400 kHz and a bottom electrode power of ˜500 W at afrequency of ˜50 kHz. The electrodes were energized (at operatingpressure) for a total of 15 s. The plasma activation was donesequentially (one bond surface at a time) for donor bond surface andhandle bond surface;

(c) Rinsing: Each wafer was removed from the plasma activation chamberand the activated bond surface is rinsed in deionized wafer. The rinsedwafers were spun dry;

(d) Contact Bonding: The donor and handle bond pair was arranged in abond chamber with bond surface facing each other. The bond chamberpressure was reduced to about 150 mbar, and the wafers were intimatelycontacted. The wafer separation was limited by Van der Waal's repulsiveforces. A contact pin was applied to the external surface of the donorwafer near an edge. The contact force is greater than the local Van derWaal's repulsive force. The contact pin force caused a bond wave toemanate from the contact point and within the confines of the wave thetwo bond surfaces bonded. The bond wave moved outward to the edges inall direction. Once the wave completely moved to the edge at the entirecircumference of the bond pair the bonding process (for this stage) iscomplete;

(e) Anneal: The bond pairs were collected in a process cassette. Thebond pairs were annealed to strengthen the bond in a Lindbergh Blue Mconvection oven at a temperature ranging from about 250° C. to about375° C. for between 1 to 4 hours. The anneal additionally nucleates andgrows hydrogen and helium filled platelets along the implantation planein the donor wafer. Anneals at temperatures in the range of 425 to 475°C. or higher may cause the platelets to grow and merge into one anotherforming a cleave plane, which could result in thermal cleaving. In thisexample, the wafers were bond annealed at 350° C. for 2 hours (withramp-up and ramp-down time collectively of 35 minutes);

(f) Mechanical Cleaving: Upon cooling sufficiently, the bond pairs weremechanically cleaved to form the SOI wafer with ONO BOX structure. Thestructures were cleaved by chucking the bond pair with handle side down.A series of suction cups (with vacuum applied) mounted on a pivotingupper arm applied an upward force to the donor wafer. A razor blade wasmoved to contact the bond pair between edge contours and apply a force.The force of the razor blade initiated a crack in the donor wafer. Thecrack reaches the depth of the implant plane (zone) filled withplatelets and micro-fractures. The crack spreads in all directions withthe applied stress from the upper arm pulling on the back side of thedonor wafer. The remnant of the donor wafer separated from thenewly-formed SOI wafer and this remnant/spent donor wafer was peeledaway from the SOI wafer as the cleave wave propagates;

(g) Surface cleaning and inspection: The newly-formed SOI wafers werecleaned and inspected to remove any particles which may have beenproduced in cleaving or wafer handling. Surface inspection (e.g. KLATencor SP1) and visual inspection revealed that the ONO SOI wafer whichwas made using PECVD nitride deposited over PECVD oxide and which wasnot polished prior to bonding had layer transfer defects (voids). Thethickness of the layers (bottom oxide, nitride, top oxide andtop-silicon) and flatness or warp were measured;

(h) Strengthening anneal: The structures were annealed to furtherstrengthen the bond interface at 1125° C. for 4 hrs (pre-epitaxysmoothing anneal, or PESA). This anneal may be at temperatures rangingfrom 1000° C. to 1125° C. for times ranging from 2 hrs. to 4 hrs. Thestructures are cleaned to remove oxide that may form during the anneal;and

(i) Epitaxial thinning: Cleave damage was removed and the top siliconlayer was thinned in an epitaxy reactor. The top silicon was thinnedfrom approximately 225 nm to a target of 148 nm. Afterwards, the waferswere cleaning and inspected. The cleaning process removes about 3 nmleaving the final top silicon thickness of 145 nm. The top oxidethickness is about 200 nm, the nitride thickness is about 75 nm and thebottom oxide thickness is about 200 nm.

FIGS. 5A and 5B depict light point defect density maps for two wafersprepared according to this example. The LPD were measured using a KLATencor SP1 surface inspection too. FIG. 5A depicts the LPD density forthe wafer subjected to densification and polishing. FIG. 5B depicts theLPD density for the wafer that was not densified before polishing. Themaps show good layer transfer and low defectivity.

Table 1 shows the warp of the wafers at the end of the line. The waferswould warp due to film stress difference between the front side (withlayers) and the back side (without layers). The annealing processappears to reduce warp. This may be explained by understanding that theannealing process will shrink the layer thickness. If this is donebefore CMP, the material removal for CMP will be less (in this caseabout 20 nm less).

TABLE 1 Warp for Example 2 Wafers Process Warp, μm A PECVD oxide + PECVDnitride + anneal + CMP 16.46 B PECVD oxide + PECVD nitride + CMP 22.06

FIGS. 6A and 6B are TEM cross-section images of the bond interfacebetween the handle nitride and the donor oxide. FIG. 6A depicts theinterface for the wafer subjected to densification and polishing. FIG.6B depicts the interface for the wafer that was not densified beforepolishing. The bond between the nitride (handle) and oxide (donor) isgood and there are no visible cracks, voids or splits at the interface.The interface appears similar to the interface between the handle(PECVD) oxide and the handle (PECVD) nitride deposited on top of thePECVD oxide. Owing to the rough surface produced by PECVD oxide (and noCMP to smoothen this layer) the interface between the PECVD oxide andnitride is rougher than the opposite interface between the polishednitride and the (relatively smooth) thermal oxide.

Example 3 Fabrication of SOI Wafers with Handle Substrates Subjected toDouble Sided Oxide and Single Sided Nitride Deposition

Three handle silicon wafers (200 mm diameter) were subjected to athermal oxidation process, which enveloped the wafer with a thermaloxide layer having a thickness of 200 nm. Atop the thermal oxide layerwas deposited a 175 nm thick layer of PECVD nitride using the same PECVDdeposition tool. One wafer was subjected to a densification anneal inwhich a wafer subject annealed for 4 hours at 1100° C. inatmospheric-pressure nitrogen ambient. Two wafers (one of which wasdensified) are chemically mechanically polished on a Mira Mesa CMP toolto leave a nitride layer thickness of about 75 nm. Accordingly, onehandle wafer was neither densified nor polished. Post-polish cleaningprocess followed to produce a clean, dry surface. A fine clean andsurface inspection was then performed to produce a uniform, clean,particle-free surface required for good bonding.

Three donor wafers were oxidized by wet thermal oxidation in an ASMA400XT vertical tube to envelope the wafers with a silicon dioxide layerhaving a nominal oxide thickness of 200 nm. Cleaning and surfaceinspection processes followed to remove any particles generated by theoxidation process or wafer handling during oxide metrology andflatness/warp measurement. Next, three donor wafers were implanted usingan Applied Materials Quantum X ion implanter, first with helium (dose1.1×10¹⁶ atoms/cm² using an energy of 60 KeV) and followed with H₂ ⁺ions (dose 0.55×10¹⁶ atoms/cm² using an energy of 71 KeV). The donorwafers passed through a series of rough and fine cleaning and inspectionto remove any contaminants or particles produced by the implantationprocess or handling. This produced a uniform, clean particle-freesurface required for good bonding.

The three handle wafers are then bonded to the three oxidized donorwafers under the identical protocol as disclosed in Example 2. FIGS. 7Aand 7B depict light point defect density maps for two wafers preparedaccording to this example. The LPD were measured using a KLA Tencor SP1surface inspection too. FIG. 7A depicts the LPD density for the wafersubjected to densification and polishing. FIG. 7B depicts the LPDdensity for the wafer that was not densified before polishing. Thesurface defectivity was higher with these wafers as compared to thewafers prepared according to the method of Example 2. Thenon-densification anneal wafer was thermally cleaved. Thermal cleavingoccurs when the wafer cleaves during the bond anneal. It may be possibleto prevent thermal cleaving if the temperature and/or time of the bondstrengthening anneal process is reduced.

Table 2 shows the warp of the wafers at the end of the line. The waferswould warp due to film stress difference between the front side (withlayers) and the back side (without layers). The annealing processappears to reduce warp. This may be explained by understanding that theannealing process will shrink the layer thickness. If this is donebefore CMP, the material removal for CMP will be less (in this caseabout 20 nm less).

TABLE 2 Warp for Example 3 Wafers Process Warp, μm A thermal oxide +PECVD nitride + anneal + CMP 5.36 B thermal oxide + PECVD nitride + CMP9.45

Comparing tables 1 and 2, it is apparent that wafers with thermal oxidehave less warp, since the film stresses are the same on both sides. Ifthe oxide is removed from the backside of the wafer, the warp willincrease. The backside thermal oxidation layer may be removed by a spinprocessor using a Bernoulli chuck (to protect the SOI top siliconsurface).

FIGS. 8A and 8B are TEM cross-section images of the bond interfacebetween the handle nitride and the donor oxide. FIG. 8A depicts theinterface for the wafer subjected to densification and polishing. FIG.8B depicts the interface for the wafer that was not densified beforepolishing. The bond between the nitride (handle) and oxide (donor) isgood and there are no visible cracks, voids or splits at the interface.

Example 4 Fabrication of SOI Wafers with Handle Substrates Subjected toDouble Sided Oxide and Double Sided Nitride Deposition

Three handle silicon wafers (200 mm diameter) were subjected to athermal oxidation process, which enveloped the wafer with a thermaloxide layer having a thickness of 200 nm. Atop the thermal oxide layerwas deposited a 175 nm thick layer of LPCVD nitride. The wafers weremasked on the front side. The nitride layer on the backside of thehandle wafer was removed by plasma etching. The plasma etching wasterminated before the oxide was removed (to prevent the bare backsidesurface from being cosmetically altered by the plasma etch. The oxidewas then stripped using wet HF etching. Finally, the front-side mask wasremoved. This produces wafers with no layers on the back side.

One wafer was subjected to a densification anneal in which a wafersubject annealed for 4 hours at 1100° C. in atmospheric-pressurenitrogen ambient. Two wafers (one of which was densified) are chemicallymechanically polished on a Mira Mesa CMP tool to leave a nitride layerthickness of about 75 nm. Accordingly, one handle wafer was neitherdensified nor polished. Post-polish cleaning process followed to producea clean, dry surface. A fine clean and surface inspection was thenperformed to produce a uniform, clean, particle-free surface requiredfor good bonding.

Three donor wafers were oxidized by wet thermal oxidation in an ASMA400XT vertical tube to envelope the wafers with a silicon dioxide layerhaving a nominal oxide thickness of 200 nm. Cleaning and surfaceinspection processes followed to remove any particles generated by theoxidation process or wafer handling during oxide metrology andflatness/warp measurement. Next, three donor wafers were implanted usingan Applied Materials Quantum X ion implanter, first with helium (dose1.1×10¹⁶ atoms/cm² using an energy of 60 KeV) and followed with H₂ ⁺ions (dose 0.55×10¹⁶ atoms/cm² using an energy of 71 KeV). The donorwafers passed through a series of rough and fine cleaning and inspectionto remove any contaminants or particles produced by the implantationprocess or handling. This produced a uniform, clean particle-freesurface required for good bonding.

The three handle wafers are then bonded to the three oxidized donorwafers under the identical protocol as disclosed in Example 2. FIGS. 9Aand 9B depict light point defect density maps for two wafers preparedaccording to this example. The LPD were measured using a KLA Tencor SP1surface inspection too. FIG. 9A depicts the LPD density for the wafersubjected to densification and polishing. FIG. 9B depicts the LPDdensity for the wafer that was not densified before polishing. The waferdepicted in FIG. 8B had a scratch in the nitride layer, revealed in thesurface map on the lower left hand side.

Table 3 shows the warp of the bare wafers, after stripping the backsidelayers, and at the end of the line. It is apparent that warp increaseswith the backside layers stripped.

TABLE 3 Warp for Example 4 Wafers Handle Bare Wafer Warp EOL HandleWafer after Layer SOI Wafer Process Warp, μm Strip, μm Warp, μm Athermal oxide + PECVD 4.77 6.43 28.53 nitride + anneal + CMP B thermaloxide + PECVD 4.83 6.10 29.39 nitride + CMP

Having described the invention in detail, it will be apparent thatmodifications and variations are possible without departing from thescope of the invention defined in the appended claims.

When introducing elements of the present invention or the preferredembodiments(s) thereof, the articles “a”, “an”, “the” and “said” areintended to mean that there are one or more of the elements. The terms“comprising”, “including” and “having” are intended to be inclusive andmean that there may be additional elements other than the listedelements.

In view of the above, it will be seen that the several objects of theinvention are achieved and other advantageous results attained.

As various changes could be made in the above products and methodswithout departing from the scope of the invention, it is intended thatall matter contained in the above description and shown in theaccompanying drawings shall be interpreted as illustrative and not in alimiting sense.

We claim:
 1. A method of preparing a multilayer structure, the methodcomprising: (a) forming a front handle silicon dioxide layer on a fronthandle surface of a single crystal silicon handle wafer and a backhandle silicon dioxide layer on a back handle surface of a singlecrystal silicon handle wafer, wherein the single crystal silicon handlewafer comprises two major, generally parallel surfaces, one of which isthe front handle surface of the single crystal silicon handle wafer andthe other of which is the back handle surface of the single crystalsilicon handle wafer, a circumferential edge joining the front handlesurface and the back handle surface of the single crystal silicon handlewafer, a central plane between the front handle surface and the backhandle surface of the single crystal silicon handle wafer, and a bulkregion between the front and back handle surfaces of the single crystalsilicon handle wafer; (b) forming a front handle silicon nitride layeron the front handle silicon dioxide layer and a back handle siliconnitride layer on the back handle silicon dioxide layer; (c) bonding thefront handle silicon nitride layer to a donor silicon dioxide layer on afront donor surface of a single crystal silicon donor wafer to therebyform a bonded structure, wherein the single crystal silicon donor wafercomprises two major, generally parallel surfaces, one of which is thefront donor surface of the single crystal silicon donor wafer and theother of which is the back donor surface of the single crystal silicondonor wafer, a circumferential edge joining the front donor surface andthe back donor surface of the single crystal silicon donor wafer, acentral plane between the front donor surface and the back donor surfaceof the single crystal silicon donor wafer, and a bulk region between thefront and back donor surfaces of the single crystal silicon donor wafer,and further wherein the single crystal silicon donor wafer comprises adamage layer formed by ion implantation; (d) removing the back handlesilicon nitride layer; and (e) removing the back handle silicon dioxidelayer.
 2. The method of claim 1, wherein step (c) occurs before step (d)and before step (e).
 3. The method of claim 2, wherein the back handlesilicon nitride layer is removed by plasma etching.
 4. The method ofclaim 2, wherein the back handle silicon dioxide layer is removed by wetetching.
 5. The method of claim 1, wherein steps (d) and (e) occurbefore step (c).
 6. The method of claim 5, wherein the back handlesilicon nitride layer is removed by plasma etching.
 7. The method ofclaim 5, wherein the back handle silicon dioxide layer is removed by wetetching.
 8. The method of claim 1, wherein the front handle silicondioxide layer is formed on the front handle surface of the singlecrystal silicon handle wafer and the back handle silicon dioxide layeron a back handle surface of the single crystal silicon handle wafer bythermal oxidation.
 9. The method of claim 1, wherein the front handlesilicon nitride layer is formed on the front handle silicon dioxidelayer and the back handle silicon nitride layer is formed on the backhandle silicon dioxide layer by low pressure chemical vapor deposition.10. The method of claim 1, further comprising annealing the singlecrystal silicon handle wafer comprising the front handle silicon dioxidelayer and the front handle silicon nitride layer at a temperature andduration sufficient to densify the front handle silicon dioxide layer,the front handle silicon nitride layer, or both, wherein the annealoccurs prior to bonding the front handle silicon nitride layer to thedonor silicon dioxide layer on the front donor surface of a singlecrystal silicon donor wafer.
 11. The method of claim 1, furthercomprising ion milling the surface of the front handle silicon nitridelayer prior to bonding the front handle silicon nitride layer to thedonor silicon dioxide layer on the front donor surface of a singlecrystal silicon donor wafer.
 12. The method of claim 1, furthercomprising chemical mechanical polishing the surface of the front handlesilicon nitride layer prior to bonding the front handle silicon nitridelayer to the donor silicon dioxide layer on the front donor surface of asingle crystal silicon donor wafer.
 13. The method of claim 1, furthercomprising annealing the bonded structure at a temperature and for aduration sufficient to strengthen the bond between the front handlesilicon nitride layer and the donor silicon dioxide layer.
 14. Themethod of claim 1, further comprising mechanically cleaving the bondedstructure at the damage layer of the single crystal silicon donor waferto thereby prepare a cleaved structure comprising the single crystalsilicon handle wafer, the handle silicon dioxide layer, the handlesilicon nitride layer, the donor silicon dioxide layer, and a singlecrystal silicon device layer.
 15. A method of preparing a multilayerstructure, the method comprising: (a) forming a front handle silicondioxide layer on a front handle surface of a single crystal siliconhandle wafer, wherein the single crystal silicon handle wafer comprisestwo major, generally parallel surfaces, one of which is the front handlesurface of the single crystal silicon handle wafer and the other ofwhich is the back handle surface of the single crystal silicon handlewafer, a circumferential edge joining the front handle surface and theback handle surface of the single crystal silicon handle wafer, acentral plane between the front handle surface and the back handlesurface of the single crystal silicon handle wafer, and a bulk regionbetween the front and back handle surfaces of the single crystal siliconhandle wafer; (b) forming a front handle silicon nitride layer on thefront handle silicon dioxide layer; (c) annealing the single crystalsilicon handle wafer comprising the front handle silicon dioxide layerand the front handle silicon nitride layer at a temperature and durationsufficient to densify the front handle silicon dioxide layer, the fronthandle silicon nitride layer, or both; and (d) bonding the front handlesilicon nitride layer to a donor silicon dioxide layer on a front donorsurface of a single crystal silicon donor wafer to thereby form a bondedstructure, wherein the single crystal silicon donor wafer comprises twomajor, generally parallel surfaces, one of which is the front donorsurface of the single crystal silicon donor wafer and the other of whichis the back donor surface of the single crystal silicon donor wafer, acircumferential edge joining the front donor surface and the back donorsurface of the single crystal silicon donor wafer, a central planebetween the front donor surface and the back donor surface of the singlecrystal silicon donor wafer, and a bulk region between the front andback donor surfaces of the single crystal silicon donor wafer, andfurther wherein the single crystal silicon donor wafer comprises adamage layer formed by ion implantation.
 16. The method of claim 15,wherein the front handle silicon dioxide layer is formed on the fronthandle surface of the single crystal silicon handle wafer and the backhandle silicon dioxide layer on a back handle surface of the singlecrystal silicon handle wafer by plasma enhanced chemical vapordeposition.
 17. The method of claim 15, wherein the front handle siliconnitride layer is formed on the front handle silicon dioxide layer andthe back handle silicon nitride layer is formed on the back handlesilicon dioxide layer by plasma enhanced chemical vapor deposition. 18.The method of claim 15, further comprising annealing the single crystalsilicon handle wafer comprising the front handle silicon dioxide layerand the front handle silicon nitride layer at a temperature and durationsufficient to densify the front handle silicon dioxide layer, the fronthandle silicon nitride layer, or both, wherein the anneal occurs priorto bonding the front handle silicon nitride layer to the donor silicondioxide layer on the front donor surface of a single crystal silicondonor wafer.
 19. The method of claim 15, further comprising ion millingthe surface of the front handle silicon nitride layer prior to bondingthe front handle silicon nitride layer to the donor silicon dioxidelayer on the front donor surface of a single crystal silicon donorwafer.
 20. The method of claim 15, further comprising chemicalmechanical polishing the surface of the front handle silicon nitridelayer prior to bonding the front handle silicon nitride layer to thedonor silicon dioxide layer on the front donor surface of a singlecrystal silicon donor wafer.
 21. The method of claim 15, furthercomprising annealing the bonded structure at a temperature and for aduration sufficient to strengthen the bond between the front handlesilicon nitride layer and the donor silicon dioxide layer.
 22. Themethod of claim 15, further comprising mechanically cleaving the bondedstructure at the damage layer of the single crystal silicon donor waferto thereby prepare a cleaved structure comprising the single crystalsilicon handle wafer, the handle silicon dioxide layer, the handlesilicon nitride layer, the donor silicon dioxide layer, and a singlecrystal silicon device layer.
 23. A method of preparing a multilayerstructure, the method comprising: (a) forming a front donor silicondioxide layer on a front donor surface of a single crystal silicon donorwafer, wherein the single crystal silicon donor wafer comprises twomajor, generally parallel surfaces, one of which is the front donorsurface of the single crystal silicon donor wafer and the other of whichis the back donor surface of the single crystal silicon donor wafer, acircumferential edge joining the front donor surface and the back donorsurface of the single crystal silicon donor wafer, a central planebetween the front donor surface and the back donor surface of the singlecrystal silicon donor wafer, and a bulk region between the front andback donor surfaces of the single crystal silicon donor wafer; (b)forming a front donor silicon nitride layer on the front donor silicondioxide layer; (c) implanting ions through the front donor siliconnitride layer and the front donor silicon dioxide layer and into thebulk region of the single crystal silicon donor wafer to thereby form adamage layer; and (d) bonding the front donor silicon nitride layer to ahandle silicon dioxide layer on a front handle surface of a singlecrystal silicon handle wafer, wherein the single crystal silicon handlewafer comprises two major, generally parallel surfaces, one of which isthe front handle surface of the single crystal silicon handle wafer andthe other of which is the back handle surface of the single crystalsilicon handle wafer, a circumferential edge joining the front handlesurface and the back handle surface of the single crystal silicon handlewafer, a central plane between the front handle surface and the backhandle surface of the single crystal silicon handle wafer, and a bulkregion between the front and back handle surfaces of the single crystalsilicon handle wafer.
 24. The method of claim 23, wherein the fronthandle silicon dioxide layer is formed on the front handle surface ofthe single crystal silicon handle wafer by plasma enhanced chemicalvapor deposition or by thermal oxidation.
 25. The method of claim 23,wherein the front donor silicon dioxide layer is formed on the frontdonor surface of the single crystal silicon donor wafer by plasmaenhanced chemical vapor deposition or by thermal oxidation.
 26. Themethod of claim 23, wherein the front donor silicon nitride layer isformed on the front donor silicon dioxide layer by low pressure chemicalvapor deposition or by plasma enhanced chemical vapor deposition. 27.The method of claim 23, further comprising annealing the single crystalsilicon donor wafer comprising the front donor silicon dioxide layer andthe front donor silicon nitride layer at a temperature and durationsufficient to densify the front donor silicon dioxide layer, the frontdonor silicon nitride layer, or both, wherein the anneal occurs prior tobonding the front donor silicon nitride layer to the handle silicondioxide layer on the front handle surface of a single crystal siliconhandle wafer.
 28. The method of claim 23, further comprising ion millingthe surface of the front donor silicon nitride layer prior to bondingthe front donor silicon nitride layer to the handle silicon dioxidelayer on the front donor surface of a single crystal silicon donorwafer.
 29. The method of claim 23, further comprising chemicalmechanical polishing the surface of the front donor silicon nitridelayer prior to bonding the front donor silicon nitride layer to thehandle silicon dioxide layer on the front handle surface of a singlecrystal silicon donor wafer.
 30. The method of claim 23, furthercomprising annealing the bonded structure at a temperature and for aduration sufficient to strengthen the bond between the handle silicondioxide layer and the donor silicon nitride layer.
 31. The method ofclaim 23, further comprising mechanically cleaving the bonded structureat the damage layer of the single crystal silicon donor wafer to therebyprepare a cleaved structure comprising the single crystal silicon handlewafer, the handle silicon dioxide layer, the donor silicon nitridelayer, the donor silicon dioxide layer, and a single crystal silicondevice layer.